Browsing by Author "Augendre, Emmanuel"

60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs

A high performance 0.18µm elevated source/drain technology with improved manufacturability

A low-power multi-gate FET CMOS technology with 13.9ps inverter delay, large-scale integrated high performance digital circuits and SRAM

A new dummy-free shallow trench isolation concept for mixed-signal applications

A new dummy-free shallow trench isolation concept for mixed-signal applications

A reliable metric for mobility extraction of short channel MOSFETs

A simulation evaluation of 100 nm CMOS device performance

Advanced CMOS device technologies for 45nm node and below

Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy

Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy

Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering

Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors

Challenges in scaling of CMOS devices towards 65nm node

CMOS device optimisation for mixed-signal technologies

CMOS integration results for the 90nm technology node

Controlling STI-related parasitic conduction in 90nm CMOS and below

Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications

Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON

Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices

Doubling or quadrupling MuGFET Fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency