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Browsing by Author "Brijs, Bert"

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    0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

    Menou, Nicolas
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    Wang, Xin Peng
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    Kaczer, Ben  
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    Polspoel, Wouter
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    Popovici, Mihaela Ioana  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632
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    A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap

    Kondoh, Eiichi
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    Conard, Thierry  
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    Brijs, Bert
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    Jin, S.
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    Bender, Hugo  
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    de Potter de ten Broeck, Muriel  
    Journal article
    1999, J. Materials Research, (14) 11, p.4402-4408
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    A comparative study of copper drift diffusion in plasma deposited a-SiC : H and Silicon Nitride

    Lanckmans, Filip
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    Gray, William
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    Brijs, Bert
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    Maex, Karen  
    Journal article
    2001, Microelectronic Engineering, (55) 1_4, p.329-335
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    A comparative study of copper drift diffusion in plasma deposited A-Sic:H and silicon nitride

    Lanckmans, Filip
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    Gray, William
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    Brijs, Bert
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    Maex, Karen  
    Oral presentation
    2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.
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    A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

    Popovici, Mihaela Ioana  
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    Tomida, Kazuyuki  
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    Swerts, Johan  
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    Favia, Paola  
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    Delabie, Annelies  
    Journal article
    2011, Physica Status Solidi A, (208) 8, p.1920-1924
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    A fundamental multitechnique of SIMS depth profiling

    Vandervorst, Wilfried  
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    Brijs, Bert
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    Bender, Hugo  
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    Alay, Josep Lluis
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    De Coster, Walter
    Proceedings paper
    1994, Quantitative Surface Analysis Conference - QSA. 8th International Conference, 23/08/1994, p.I10
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    A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

    Alam, M.A.
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    Green, Martin
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    Ho, M.Y.
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    Vandervorst, Wilfried  
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    Brijs, Bert
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    Conard, Thierry  
    Oral presentation
    2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS
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    A new compact eucentric goniometer for RBS, HFS, PIXE, and channeling

    Strathman, M.
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    Brijs, Bert
    Oral presentation
    1998, 15th International Conference on the Application of Accelerators in Research and Industry; 4-7 November 1998; Denton, TX, USA.
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    A new compact eucentric goniometer for RBS, HFS, PIXE, and channeling

    Strathman, M. D.
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    Brijs, Bert
    Proceedings paper
    1999, Applications of Accelerators in Research and Industry: Proceedings of the 15th International Conference, 4/11/1998, p.850-853
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    A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates

    Satta, Alessandra
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    Schuhmacher, Jörg
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    Whelan, Caroline
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    Vandervorst, Wilfried  
    Meeting abstract
    2002, B-ALD-5: The 5th Baltic Symposium on Atomic Layer Deposition, 24/10/2002, p.21
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    A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates

    Travaly, Youssef
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    Schuhmacher, Jorg
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    Baklanov, Mikhaïl
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    Giangrandi, Simone
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    Richard, Olivier  
    Journal article
    2005-10, Journal of Applied Physics, (98) 8, p.083515-1-083515-9
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    (A)thermal migration of Ge during junction formation in a-Si layers grown on thin SiGe-buffer layers

    Vandervorst, Wilfried  
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    Pawlak, Bartek  
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    Janssens, Tom
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    Brijs, Bert
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    Delhougne, Romain  
    Proceedings paper
    2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.273-279
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    (A)thermal migration of Ge during junction formation in s-Si grown on thin SiGe-buffer layers

    Vandervorst, Wilfried  
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    Pawlak, Bartek  
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    Janssens, Tom
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    Brijs, Bert
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    Delhougne, Romain  
    Oral presentation
    2004, Silicon Front-End Junction Formation - Physics and Technology
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    Accurate determination of Si sputter yield in the transient region

    Deleu, Jeroen
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    Brijs, Bert
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    Vandervorst, Wilfried  
    Oral presentation
    1999, SIMS XII; 5-10 September 1999; Brussel, Belgium.
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    Advanced capabilities and applications of a sputter-RBS system

    Brijs, Bert
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    Deleu, Jeroen
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    Beyer, Gerald  
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    Vandervorst, Wilfried  
    Oral presentation
    1998, 15th International Conference on the Application of Accelerators in Research and Industry; 4-7 November 1998; Denton, TX, USA.
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    Advanced capabilities and applications of a sputter-RBS system

    Brijs, Bert
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    Deleu, Jeroen
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    Beyer, Gerald  
    ;
    Vandervorst, Wilfried  
    Proceedings paper
    1999, Applications of Accelerators in Research and Industry: Proceedings of the 15th International Conference, 4/11/1998, p.586-591
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    Advanced characterization of high-K materials: a nuclear approach

    Brijs, Bert
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    Huyghebaert, Cedric  
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    Nauwelaerts, Sophie
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    Caymax, Matty  
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    Vandervorst, Wilfried  
    Journal article
    2002, Nuclear Instruments & Methods in Physics Research B, 190, p.505-509
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    Advanced RBS analysis of thin films in micro-electronics

    Brijs, Bert
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    Deleu, Jeroen
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    Huygebaert, C.
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    Nauwelaerts, Sophie
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    Vandervorst, Wilfried  
    Oral presentation
    2000, 16th International Conference on the Application of Accelerators in Research and Industry - CAARI; 1-4 November 2000; Denton, TX
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    Advanced RBS analysis of thin films in micro-electronics

    Brijs, Bert
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    Deleu, Jeroen
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    Huyghebaert, Cedric  
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    Nauwelaerts, Sophie
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    Nakajima, K.
    ;
    Kimura, K.
    Proceedings paper
    2001, Application of Accelerators in Research and Industry: Sixteenth International Conference; Denton, TX, USA, 1-5 Nov 2000., p.470-475
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    ALCVD hafnium silicates for low power gate stacks

    Maes, Jan  
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    Laitinen, O.
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    De Witte, Hilde
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    Deweerd, Wim
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    Delabie, Annelies  
    ;
    Conard, Thierry  
    Oral presentation
    2004, Atomic Layer Deposition Conference
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