Browsing by Author "Carter, Richard"
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Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Charge trapping, mobility degradation and reliability of high-e gate stacks
Publication Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Proceedings paper2003, Symposium on VLSI Technology. Digest of Technical Papers, 10/06/2003, p.21-22Publication Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Proceedings paper2003, ULSI Process Integration III, 28/04/2003, p.391-396Publication Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks
Journal article2002, Journal of Applied Physics, (91) 12, p.10127-10129Publication Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
; ; Zhao, ChaoProceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.35-40Publication Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator. IWGI 2001; 1-2 November 2001; Tokyo, Japan., p.94-99Publication Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Oral presentation2002, Atomic Layer Deposition Conference - ALDPublication Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon
Proceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.197-202Publication High k dielectric materials prepared by atomic layer CVD
Oral presentation2001, 12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy.Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Investigation of fluorine in dry ultrathin silicon oxides
Oral presentation2000, 47th International Sympsoium of the American Vacuum SocietyPublication Investigation of fluorine in dry ultrathin silicon oxides
Journal article2001, Journal of Vacuum Science & Technology B, (19) 6, p.2108-2113Publication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 65 nm NMOS process flow
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.251-254Publication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?