Browsing by Author "Carter, Richard"
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Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Charge trapping, mobility degradation and reliability of high-e gate stacks
Publication Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Proceedings paper2003, Symposium on VLSI Technology. Digest of Technical Papers, 10/06/2003, p.21-22Publication Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Proceedings paper2003, ULSI Process Integration III, 28/04/2003, p.391-396Publication Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks
Journal article2002, Journal of Applied Physics, (91) 12, p.10127-10129Publication Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
; ; Zhao, ChaoProceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.35-40Publication Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator. IWGI 2001; 1-2 November 2001; Tokyo, Japan., p.94-99Publication Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Oral presentation2002, Atomic Layer Deposition Conference - ALDPublication Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon
Proceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.197-202Publication High k dielectric materials prepared by atomic layer CVD
Oral presentation2001, 12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy.Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Investigation of fluorine in dry ultrathin silicon oxides
Journal article2001, Journal of Vacuum Science & Technology B, (19) 6, p.2108-2113Publication Investigation of fluorine in dry ultrathin silicon oxides
Oral presentation2000, 47th International Sympsoium of the American Vacuum SocietyPublication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 65 nm NMOS process flow
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.251-254Publication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?