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Browsing by Author "Chen, Jerry"

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    Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications

    Kaushik, V.
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    De Gendt, Stefan  
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    Caymax, Matty  
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    Young, E.
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    Röhr, Erika
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    Van Elshocht, Sven  
    Proceedings paper
    2003, ULSI Process Integration III, 28/04/2003, p.391-396
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    Effect of N2 annealing on AlxZryOz oxide

    Petry, Jasmine
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    Richard, Olivier  
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    Vandervorst, Wilfried  
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    Conard, Thierry  
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    Chen, Jerry
    Oral presentation
    2002, AVS 49th International Symposium
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    Effect of N2 annealing on AlZrO oxide

    Petry, Jasmine
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    Richard, Olivier  
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    Vandervorst, Wilfried  
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    Conard, Thierry  
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    Chen, Jerry
    Journal article
    2003, Journal of Vacuum Science & Technology A, (21) 4, p.1482-1487
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    Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching

    Claes, Martine  
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    De Gendt, Stefan  
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    Witters, Thomas  
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    Kaushik, Vidya
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    Conard, Thierry  
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    Zhao, Chao
    Journal article
    2004, Journal of the Electrochemical Society, (151) 11, p.F269-F275
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    Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications

    Caymax, Matty  
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    Brijs, Bert
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    Carter, Richard
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    Claes, Martine  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2002, Atomic Layer Deposition Conference - ALD
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    Implementation of high-k gate dielectrics - a status update

    De Gendt, Stefan  
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    Chen, Jerry
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    Carter, Richard
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    Cartier, Eduard
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    Caymax, Matty  
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    Claes, Martine  
    Proceedings paper
    2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14
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    Interface state passivation in conventional SiO2/HfO2 p-channel FETs

    Chen, Jerry
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    Pantisano, Luigi
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    Kerber, Andreas
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    Ragnarsson, Lars-Ake  
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    Cartier, Eduard
    Oral presentation
    2003, Insulating Films on Semiconductors - INFOS. 13th Bi-Annual Conference
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    Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow

    Kubicek, Stefan  
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    Chen, Jerry
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    Ragnarsson, Lars-Ake  
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    Carter, Richard
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    Kaushik, Vidya
    Proceedings paper
    2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.251-254
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    Issues, achievements and challenges towards integration of high-k dielectrics

    Caymax, Matty  
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    De Gendt, Stefan  
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    Vandervorst, Wilfried  
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    Heyns, Marc  
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    Bender, Hugo  
    Proceedings paper
    2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?
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    Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

    Schram, Tom  
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    Ragnarsson, Lars-Ake  
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    Lujan, Guilherme
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    Deweerd, Wim
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    Chen, Jerry
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    Tsai, Wilman
    Journal article
    2005-03, Microelectronics Reliability, (45) 5_6, p.779-782
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    Physical characterisation of high-gate stacks

    Vandervorst, Wilfried  
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    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Zhao, Chao
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    Brijs, Bert
    Oral presentation
    2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS
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    Physical characterization of ultrathin high k dielectrics

    Vandervorst, Wilfried  
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    Brijs, Bert
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    Bender, Hugo  
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    Conard, Thierry  
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    Petry, Jasmine
    Proceedings paper
    2003, 8th International Symposium on Plasma-and Process-Induced Damage, 24/04/2003, p.40-50
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    Scaling of Hf-based gate dielectrics - integration with polysilicon gates

    De Gendt, Stefan  
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    Caymax, Matty  
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    Chen, Jerry
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    Claes, Martine  
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    Conard, Thierry  
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    Delabie, Annelies  
    Meeting abstract
    2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003
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    Scaling of high-k dielectrics towards sub-1nm EOT

    Heyns, Marc  
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    Beckx, Stephan  
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    Bender, Hugo  
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    Blomme, Pieter  
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    Boullart, Werner  
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    Brijs, Bert
    Proceedings paper
    2003, IEEE International Symposium on VLSI Technology, Systems, and Applications, 23/04/2003, p.251-254
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    Screening the high-k layer quality by means of open circuit potential analysis and wet chemical etching

    Claes, Martine  
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    De Gendt, Stefan  
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    Witters, Thomas  
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    Kaushik, Vidya
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    Chen, Jerry
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    Conard, Thierry  
    Proceedings paper
    2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.15-20
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    The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration

    Kaushik, Vidya
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    De Gendt, Stefan  
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    Carter, Richard
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    Claes, Martine  
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    Röhr, Erika
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    Pantisano, Luigi
    Proceedings paper
    2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.335-340
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    Thermal stability and scalability of zr-aluminate-based high-k gate stacks

    Chen, Jerry
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    Cartier, Eduard
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    Carter, Richard
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    Kauerauf, Thomas
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    Zhao, Chao
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    Pétry, Jasmine
    Proceedings paper
    2002, Symposium on VLSI Technology: Digest of Technical Papers, 11/06/2002, p.192-193

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