Browsing by Author "De Santi, Carlo"
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Publication Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Journal article2020, Applied Physics Express, (13) 2, p.24004Publication Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Journal article review2021, MATERIALS, (14) 9, p.2316Publication Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.4B-5.1-4B-5.5Publication Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
;Mukherjee, Kalparupa ;De Santi, Carlo ;Meneghesso, GaudenzioZanoni, EnricoProceedings paper2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020Publication Exploration of gate trench module for vertical GaN devices
Journal article2020, Microelectronics Reliability, 114, p.113828Publication Gate module study for performance improvement in vertical GaN device
Proceedings paper2021, WOCSDICE 2021 - 44th Workshop on Copound Semiconductor Devices and Integrated Circuits held in Europe, 14/06/2020, p.70-71Publication Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
; ;Mukherjee, Kalparupa ;De Santi, Carlo; ; Journal article2020, Applied Physics Express, (13) 2, p.24006Publication Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
Journal article2020, IEEE Transactions on Electron Devices, (67) 2, p.595-599Publication Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics
;Zenari, Michele ;Buffolo, Matteo ;De Santi, Carlo ;Goyvaerts, JeroenGrabowski, AlexanderJournal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 2, p.431-438Publication On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 3, p.1646-1653Publication Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
;Diehle, Patrick ;Hübner, Susanne ;De Santi, Carlo ;Mukherjee, KalparupaZanoni, EnricoProceedings paper2021, International Conference on Advanced Semi-conductor Devices And Microsystems, 11/10/2020, p.10-13Publication Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
Journal article2023, MICROELECTRONICS RELIABILITY, (150) November, p.Art. 115133Publication The 2018 GaN power electronics roadmap
Journal article2018, Journal of Physics D: Applied Physics, (51) 16, p.163001-01-163001-48Publication Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs
Journal article2021, MICROMACHINES, (12) 4, p.445Publication Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits
Journal article2023, IEEE JOURNAL OF QUANTUM ELECTRONICS, (59) 4, p.Art. 2400210Publication Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability
Journal article2020, Materials, (13) 21, p.4740Publication Vertical GaN devices: Process and reliability
; ; ; ; ;Hahn, Herwig ;Fahle, DirkHeuken, MichaelJournal article2021, MICROELECTRONICS RELIABILITY, 126