Browsing by Author "Hoffmann, Thomas"

3D-carrier profiling in FinFETs using scanning spreading resistance microscopy

Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

Advanced CMOS device technologies for 45nm node and below

Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges

Assessment of OPC effectiveness using two-dimensional metrics

Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation

Conformal doping of FINFET's: a fabrication and metrology challenge

Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications

Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers

Hydrothermal growth of BaTiO3 on TiO2 single crystals

Influence of the microstructure on the oxidation of Ni thin films

Interim investigation of CD-SEM resist shrinkage in 193nm lithography

Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

On the efficiency of stress techniques in gate-last n-type bulk FinFETs

OPC aware mask and wafer metrology

Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins

Performance and leakage optimization in carbon and fluorine C0-implanted pMOSFETs