Browsing by Author "Kaiser, M."
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Publication 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
; ; Publication A manufacturable 25nm planar MOSFET technology
Publication Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Journal article2004, Japanese J. of Appl. Phys. Part 1, (43) 4B, p.1778-1783Publication Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Proceedings paper2008, IEEE International Electron Devices Meeting - IEDM, 15/12/2008, p.535-538Publication Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies
Publication Gatestacks for scalable high-performance FinFETs
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.681-684Publication Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.110-111Publication Improved fin width scaling in fully-depleted FinFETs
; ; ; ; Rooyackers, RitaProceedings paper2008, 38th European Sooid-State Device Research Conference - ESSDERC, 16/09/2008, p.334-337Publication Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopy
Journal article2004, Journal of Applied Physics, (96) 9, p.4878-4889Publication Laser annealing for ultra-shallow junction formation in advanced CMOS
Proceedings paper2002, Rapid Thermal And Other Short-Time Processing Technologies III, 12/05/2002, p.413-426Publication Material aspects and challenges for SOI FinFET integration
Proceedings paper2008, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment, 18/05/2008, p.223-234Publication Materials issues of Ni fully silicided (FUSI) gates for CMOS applications
Proceedings paper2005-05, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 16/05/2005, p.225-232Publication Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Journal article2009, Solid-State Electronics, (53) 7, p.760-766Publication Pre-amorphization and co-implantation suitability for advanced PMOS devices integration
; ; ; Dachs, CharlesProceedings paper2003, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, 16/09/2003, p.740-741Publication Silicides for advanced CMOS devices
Proceedings paper2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.379-388Publication Solid phase epitaxy versus random nucleation and growth in sub-20 nm wide fin field-effect transistors
; ; Publication The relation between phase formation and onset of thermal degradation in nano-scale CoSi2-polycrystalline silicon structures
Journal article2004-12, Journal of Applied Physics, (96) 12, p.7568-7573