Browsing by Author "Kerber, Andreas"
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Publication A study of relaxation current in high-k gate stacks
Journal article2004-03, IEEE Trans. Electron Devices, (51) 3, p.402-408Publication Accurate reliability evaluation of non-uniform ultrathin and high-k layers
Proceedings paper2003-03, Proceedings 41st Annual IEEE International Reliability Physics Symposium, 30/03/2003, p.29-33Publication Characterization of charge trapping in SiO2/HfO2 dielectrics
Proceedings paper2003, Proceedings International Semiconductor Device Research Symposium, 10/12/2003, p.322-323Publication Characterization of the Vt-instability un SiO2 HFO2 gate dielectrics
Proceedings paper2003, Proceedings 41st Annual IEEE International Reliability Physics Symposium, 30/03/2003, p.41-45Publication Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration
Proceedings paper2003, Proceedings of the 12th Workshop on Dielectrics in Microelectronics, 18/11/2002, p.45-52Publication Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration
Oral presentation2002, Workshop on Dielectrics in Insulators - WODIMPublication Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
Journal article2003, IEEE Trans. Electron Devices, (50) 5, p.1261-1269Publication Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
Publication Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
Publication Charge trapping, mobility degradation and reliability of high-e gate stacks
Publication Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks
Oral presentation2003, Insulating Films on Semiconductors Conference - INFOS. 13th Bi-Annual ConferencePublication Correlation between stress-induced leakage current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack
Proceedings paper2004-04, Proceedings IEEE International Reliability Physics Symposium - IRPS, 25/04/2004, p.181-187Publication Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
Proceedings paper2003, VLSI Technology Symposium, 10/06/2003, p.159-160Publication Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide
Proceedings paper2003, VLSI Technology Symposium, 10/06/2003, p.163-164Publication Effect of bulk trap density on HfO2 reliability and yield
Proceedings paper2003-12, Technical Digest IEDM - IEEE International Electron Devices Meeting, 8/12/2003, p.935-938Publication Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator. IWGI 2001; 1-2 November 2001; Tokyo, Japan., p.94-99Publication Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks
; Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Interface state passivation in conventional SiO2/HfO2 p-channel FETs
Oral presentation2003, Insulating Films on Semiconductors - INFOS. 13th Bi-Annual Conference
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