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Browsing by Author "Menou, Nicolas"

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    0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

    Menou, Nicolas
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    Wang, Xin Peng
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    Kaczer, Ben  
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    Polspoel, Wouter
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    Popovici, Mihaela Ioana  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632
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    ALD strontium titanates and their characterization

    Popovici, Mihaela Ioana  
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    Van Elshocht, Sven  
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    Tomida, Kazuyuki  
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    Menou, Nicolas
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    Swerts, Johan  
    Oral presentation
    2010, International Workshop on Power Supply On Chip
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    Alternative high-k dielectrics for semiconductor applications

    Van Elshocht, Sven  
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    Adelmann, Christoph  
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    Clima, Sergiu  
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    Pourtois, Geoffrey  
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    Conard, Thierry  
    Journal article
    2009, Journal of Vacuum Science and Technology B, (27) 1, p.209-213
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    Alternative high-k dielectrics for semiconductor applications

    Van Elshocht, Sven  
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    Adelmann, Christoph  
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    Clima, Sergiu  
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    Pourtois, Geoffrey  
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    Conard, Thierry  
    Oral presentation
    2008, 15th Workshop on Dielectrics in Microelectronics - WODIM
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    Atomic layer deposition of hafnium titanates dielectric layers

    Popovici, Mihaela Ioana  
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    Delabie, Annelies  
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    Van Elshocht, Sven  
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    Menou, Nicolas
    ;
    Wang, Xin Peng
    Proceedings paper
    2008, 8th International Conference on Atomic Layer Deposition - ALD, 29/06/2008
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    Atomic layer deposition of strontium titanate films using Sr(tBu3Cp)2 and Ti(OMe)4

    Popovici, Mihaela Ioana  
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    Van Elshocht, Sven  
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    Menou, Nicolas
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    Swerts, Johan  
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    Pierreux, Dieter  
    Journal article
    2010, Journal of the Electrochemical Society, (157) 1, p.G1-G6
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    Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes

    Menou, Nicolas
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    Popovici, Mihaela Ioana  
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    Clima, Sergiu  
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    Opsomer, Karl  
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    Polspoel, Wouter
    Journal article
    2009, Journal of Applied Physics, (106) 9, p.94101
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    Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

    Manger, Dirk
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    Kaczer, Ben  
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    Menou, Nicolas
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    Clima, Sergiu  
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    Wouters, Dirk
    ;
    Afanasiev, Valeri  
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1815-1817
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    Crystallization study of thin ZrO2 ALD films on Al203 and on TiN for DRAM MIMCAP applications

    Pawlak, Malgorzata
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    Menou, Nicolas
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    Wang, Xin Peng
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    Dilliway, G.
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    Pierreux, D.
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    Fischer, P.
    Oral presentation
    2008, MRS Spring Meeting Symposium H: Materials Science of High-k Dielectric Stacks
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    Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications

    Dilliway, G.
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    Pierreux, D.
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    Fischer, P.
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    Menou, Nicolas
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    Pawlak, Malgorzata
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    Wang, Xin Peng
    Proceedings paper
    2008, 8th International Conference on Atomic Layer Deposition - ALD, 29/06/2008
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    Effect of the composition on the bandgap width of high-k MexTiyOz (Me=Hf,Ta, Sr)

    Wang, Wan-Chih
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    Badylevich, V.
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    Afanas'ev, V.V.
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    Stesmans, Andre  
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    Popovici, Mihaela Ioana  
    Journal article
    2011, Thin Solid Films, (519) 17, p.5730-5733
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    Growth and layer characterization of SrTiO3 by atomic layer deposition using Sr(tBu3Cp)2 and Ti(OMe)4

    Popovici, Mihaela Ioana  
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    Van Elshocht, Sven  
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    Menou, Nicolas
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    Swerts, Johan  
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    Pierreux, Dieter  
    Proceedings paper
    2009, CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications, 13/04/2009, p.1155-C08-03
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    Growth and material characterization of hafnium titanates deposited by atomic layer deposition

    Popovici, Mihaela Ioana  
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    Delabie, Annelies  
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    Van Elshocht, Sven  
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    Clima, Sergiu  
    Journal article
    2009, Journal of the Electrochemical Society, (156) 10, p.G145-G151
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    High-k dielectrics and metal gates for future generation memory devices

    Kittl, Jorge
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    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
    ;
    Kaczer, Ben  
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    Wang, Xin Peng
    Meeting abstract
    2009, 215th ECS Meeting, 24/05/2009, p.690
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    High-k dielectrics and metal gates for future generation memory devices

    Kittl, Jorge
    ;
    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
    ;
    Kaczer, Ben  
    ;
    Wang, Xin Peng
    Proceedings paper
    2009, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS. 5: New Materials, Processing, and Equipment, 24/05/2009, p.29-40
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    High-k dielectrics for future generation memory devices

    Kittl, Jorge
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    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
    ;
    Kaczer, Ben  
    ;
    Wang, Xin Peng
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1789-1795
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    Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition

    Popovici, Mihaela Ioana  
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    Van Elshocht, Sven  
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    Menou, Nicolas
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    Favia, Paola  
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    Bender, Hugo  
    Journal article
    2011, Journal of Vacuum Science and Technology B, (29) 1, p.01A304
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    Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition

    Popovici, Mihaela Ioana  
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    Van Elshocht, Sven  
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    Menou, Nicolas
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    Favia, Paola  
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    Bender, Hugo  
    Meeting abstract
    2010, 16th Workshop on Dielectrics in Microelectronics - WODIM, 28/06/2010
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    Integrated functional oxides in non-volatile memory devices

    Muller, Christophe
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    Courtade, Lorene
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    Turquat, Ch.
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    Menou, Nicolas
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    Lisoni, Judit
    ;
    Goux, Ludovic  
    Meeting abstract
    2008, Workshop Oxydes Fontionnels pour l'Integration en Micro- et Nano-Electronique, 16/03/2008
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    Nano beam diffraction: crystal structure and strain analysis at the nano-scale

    Favia, Paola  
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    Popovici, Mihaela Ioana  
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    Eneman, Geert  
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    Wang, Gang
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    Bargallo Gonzalez, Mireia
    Meeting abstract
    2010, 218th ECS Meeting: High Purity Silicon 11, 10/10/2010, p.1572
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