Browsing by Author "Meunier-Beillard, Philippe"
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Publication A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Journal article2004, Applied Surface Science, (224) 1_4, p.63-67Publication A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Meeting abstract2003-01, Book of Abstracts 1st International SiGe Technology and Device Meeting - ISTDM, 15/01/2003, p.159-160Publication A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.655-658Publication A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Proceedings paper2007, Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 10/01/2007, p.158-161Publication Analysis of junctions formed in strained Si/SiGe substrates
; ; ; ; Proceedings paper2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.187-192Publication Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Meeting abstract2003, Book of Abstracts ISTDM - 1st International SiGe Technology and Device Meeting, 15/01/2003, p.115-116Publication Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Journal article2004, Applied Surface Science, (224) 1_4, p.91-94Publication Effects of boron and germanium base profiles on SiGe and SiGe:C BJT characteristics
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.611-614Publication Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Journal article2004, Materials Science in Semiconductor ProcessingPublication Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Meeting abstract2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 16/05/2004, p.131-132Publication Ge island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor
Proceedings paper2001, Amorphous and Heterogeneous Silicon-Based Films, 16/04/2001, p.A8.8.1-A8.8.6Publication In-line and non-destructive analysis of epitaxial Si1-x-yGexCy
Journal article2004, Yield Management Solutions, (6) 2, p.40-47Publication In-line and non-destructive analysis of epitaxial Si1-x-yGexCy by spectroscopic ellipsometry and comparison with other established techniques
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials and Processes, 27/04/2003, p.329-338Publication N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C
Journal article2004, Applied Surface Science, (224) 1_4, p.31-35Publication N2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situation
Oral presentation2003, 10th ISESH ConferencePublication N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C
Meeting abstract2003, Abstracts Book ISTDM - 1st International SiGe Technology and Device Meeting, 15/01/2003, p.121-122Publication On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs
Journal article2007, IEEE Electron Device Letters, (28) 4, p.270-272Publication Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices
Journal article2004, Solid State Electronics, (48) 8, p.1307-1316Publication (Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices
Proceedings paper2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.3-14Publication Strained Si and strained SiGe fabrication schemes using (selective) epitaxial growth in a RPCVD system
Oral presentation2003, Workshop on Si/Sige Field-Effect Transistors