Browsing by Author "Nafria, M."

Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits

Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM

C-AFM Characterization of the dependance of AlHfOx electrical behaviour on post deposition annealing temperature

Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

CHC degradation of strained devices based on SiON and high-k gate dielectric materials

Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale

Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM

Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance

Processing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors

Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors