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Browsing by Author "Pantisano, Luigi"

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    1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

    Magnone, P.
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    Crupi, F.
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    Giusi, G.
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    Pace, C.
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    Simoen, Eddy  
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    Claeys, Cor
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    Pantisano, Luigi
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    Maji, D.
    Journal article
    2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189
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    85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

    Mitard, Jerome  
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    Witters, Liesbeth  
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    Eneman, Geert  
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    Hellings, Geert  
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    Pantisano, Luigi
    Proceedings paper
    2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.163-164
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    A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

    Chang, Vincent
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    Ragnarsson, Lars-Ake  
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    Pourtois, Geoffrey  
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    O'Connor, Robert
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    Adelmann, Christoph  
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538
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    A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics

    Crupi, Felice
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Pantisano, Luigi
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    Groeseneken, Guido  
    Journal article
    2005-08, IEEE Trans. Electron Devices, (52) 8, p.1759-1765
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    A reliable metric for mobility extraction of short channel MOSFETs

    Severi, Simone  
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    Pantisano, Luigi
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    Augendre, Emmanuel
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    San Andres Serrano, Enrique
    Journal article
    2007, IEEE Transaction Electron Devices, (54) 10, p.2690-2698
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    A study of relaxation current in high-k gate stacks

    Xu, Zhen
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    Pantisano, Luigi
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    Kerber, Andreas
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    Degraeve, Robin  
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    Cartier, Eduard
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    De Gendt, Stefan  
    Journal article
    2004-03, IEEE Trans. Electron Devices, (51) 3, p.402-408
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    Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

    San Andres Serrano, Enrique
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    Pantisano, Luigi
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    Ramos, Javier
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    Roussel, Philippe  
    Journal article
    2007, IEEE Trans. Electron Devices, (54) 7, p.1705-1712
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    Accurate reliability evaluation of non-uniform ultrathin and high-k layers

    Roussel, Philippe  
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    Degraeve, Robin  
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    Kerber, Andreas
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    Pantisano, Luigi
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    Groeseneken, Guido  
    Proceedings paper
    2003-03, Proceedings 41st Annual IEEE International Reliability Physics Symposium, 30/03/2003, p.29-33
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    Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

    Groeseneken, Guido  
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    Pantisano, Luigi
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    Ragnarsson, Lars-Ake  
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    Degraeve, Robin  
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    Houssa, Michel  
    Proceedings paper
    2004, Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 5/07/2004, p.147-155
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    Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

    Shickova, Adelina
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    Kauerauf, Thomas
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    Rothschild, Aude
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    Aoulaiche, Marc
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    Sahhaf, Sahar  
    Proceedings paper
    2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159
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    Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

    Zahid, Mohammed
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    Pantisano, Luigi
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    Degraeve, Robin  
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    Aoulaiche, Marc
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    Trojman, Lionel
    Proceedings paper
    2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.32-33
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    Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing

    Morassi, L.
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    Larcher, L.
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    Pantisano, Luigi
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    Padovani, A.
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    Degraeve, Robin  
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    Zahid, Mohammed
    Proceedings paper
    2009, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.294-295
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    ALD deposition of high-k and metal gate stacks for advanced CMOS applications

    Heyns, Marc  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
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    De Gendt, Stefan  
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    Degraeve, Robin  
    Proceedings paper
    2004, Atomic Layer Deposition Conference, 16/08/2004
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    An assessment of the mobility degradation induced by remote charge scattering

    Ji, Z.
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    Zhang, J.F.
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    Zhang, W.
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    Groeseneken, Guido  
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    Pantisano, Luigi
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    De Gendt, Stefan  
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    Heyns, Marc  
    Journal article
    2009, Applied Physics Letters, (95) 26, p.263502
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    Analysing impact of MOSFET oxide breakdown by small- and large-signal HF measurements

    Schreurs, Dominique  
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    Pantisano, Luigi
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    Kaczer, Ben  
    Proceedings paper
    2004, Automatic RF Techniques Group Conference (ARFTG), 30/11/2004, p.85-91
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    Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping

    O'Connor, Robert
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    Chang, Vincent
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    Pantisano, Luigi
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    Ragnarsson, Lars-Ake  
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    Aoulaiche, Marc
    Journal article
    2008, Applied Physics Letters, (93) 5, p.53506
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    Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping

    O'Connor, Robert
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    Chang, Vincent
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    Pantisano, Luigi
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    Ragnarsson, Lars-Ake  
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    Aoulaiche, Marc
    Proceedings paper
    2008, IEEE International Reliability Physics Symposium Proceedings, 27/04/2008, p.671-672
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    Atomic and electrical characterisation of amorphous silicon passivation layers

    O'Sullivan, Barry  
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    Thoan, N.H.
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    Jivanescu, M.
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    Pantisano, Luigi
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    Bearda, Twan
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    Dross, Frederic
    Proceedings paper
    2012, Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV, 3/04/2012, p.185-190
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    Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni

    Goux, Ludovic  
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    Polspoel, Wouter
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    Lisoni, Judit
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    Chen, Yangyin  
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    Pantisano, Luigi
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    Wang, Xin Peng
    Journal article
    2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192
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    Characterization of charge trapping in SiO2/HfO2 dielectrics

    Degraeve, Robin  
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    Kerber, Andreas
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    Cartier, Ed
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    Pantisano, Luigi
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    Groeseneken, Guido  
    Proceedings paper
    2003, Proceedings International Semiconductor Device Research Symposium, 10/12/2003, p.322-323
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