Browsing by Author "Pantisano, Luigi"
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Publication 1/f Noise in drain and gate current of MOSFETs with high-k gate stacks
Journal article2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189Publication 85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.163-164Publication A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538Publication A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics
Journal article2005-08, IEEE Trans. Electron Devices, (52) 8, p.1759-1765Publication A reliable metric for mobility extraction of short channel MOSFETs
Journal article2007, IEEE Transaction Electron Devices, (54) 10, p.2690-2698Publication A study of relaxation current in high-k gate stacks
Journal article2004-03, IEEE Trans. Electron Devices, (51) 3, p.402-408Publication Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
Journal article2007, IEEE Trans. Electron Devices, (54) 7, p.1705-1712Publication Accurate reliability evaluation of non-uniform ultrathin and high-k layers
Proceedings paper2003-03, Proceedings 41st Annual IEEE International Reliability Physics Symposium, 30/03/2003, p.29-33Publication Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics
Proceedings paper2004, Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 5/07/2004, p.147-155Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.32-33Publication Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
Proceedings paper2009, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.294-295Publication ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication An assessment of the mobility degradation induced by remote charge scattering
;Ji, Z. ;Zhang, J.F. ;Zhang, W.; ;Pantisano, Luigi; Journal article2009, Applied Physics Letters, (95) 26, p.263502Publication Analysing impact of MOSFET oxide breakdown by small- and large-signal HF measurements
Proceedings paper2004, Automatic RF Techniques Group Conference (ARFTG), 30/11/2004, p.85-91Publication Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
Journal article2008, Applied Physics Letters, (93) 5, p.53506Publication Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
Proceedings paper2008, IEEE International Reliability Physics Symposium Proceedings, 27/04/2008, p.671-672Publication Atomic and electrical characterisation of amorphous silicon passivation layers
Proceedings paper2012, Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV, 3/04/2012, p.185-190Publication Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Journal article2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192Publication Characterization of charge trapping in SiO2/HfO2 dielectrics
Proceedings paper2003, Proceedings International Semiconductor Device Research Symposium, 10/12/2003, p.322-323