Browsing by Author "Shamiryan, Denis"

25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS

A discussion of the practical importance of positron annihilation lifetime spectroscopy percolation threshold in evaluation of porous low-k dielectrics

A plasma etch process for bulk finFET manufacturing

Atomic layer deposited barriers for copper interconnects

Barrier deposition on porous low-k films

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

C2H4-based plasma-assisted CD shrink and contact patterning for RRAM application

Characterisation of Cu surface cleaning by downstream N2/H2 plasma

Characteristics of Selective Epitaxial SiGe and Si Deposition processes for recessed source/drain applications

Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications

Characterization of Cu surface cleaning by hydrogen plasma

Charging and the secondary electron-electron emission on a trench surface: broadening and shift of ion energy spectrum at plasma trench etching

Charging of submicron structures during silicon dioxide etching in one

Cleaning challenges of high-k/metal gate structures

Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

Controllable change of porosity of 3-methylsilane low-k dielectric film

Controllable change of porosity of SiOCH low-k dielectric film