Browsing by Author "Tsai, Wilman"

Advanced surface preparation leading into the nano-era

ALD HfO2 surface preparation study

Alternative gate insulator materials for future generation MOSFETs

Atomic layer deposition and remote plasma surface preparation for gate stack applications

Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation

Atomic layer deposition of hafnium oxide on germanium substrates

Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces

Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks

Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission

Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers

Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching

Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)

Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors

Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications

High k dielectric materials prepared by atomic layer CVD

High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions

Implementation of high-k gate dielectrics - a status update

Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition