Browsing by Author "Zanoni, E."
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Publication A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.13.3Publication Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
Journal article2015, Solid-State Electronics, 113, p.9-14Publication Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
;Modolo, N. ;Fregolent, M. ;Masin, F. ;Benato, A. ;Bettini, A. ;Buffolo, M. ;De Santi, C.Journal article2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 120560BPublication Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Journal article2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4432-4437Publication Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Proceedings paper2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95Publication ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
;Canato, E ;Meneghini, M. ;Nardo, A. ;Masin, F. ;Barbato, F. ;Barbato, M.; Banerjee, A.Journal article2019, Microelectronics Reliability, 100, p.113334Publication High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Proceedings paper2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023Publication Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Journal article2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 114620Publication Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-6Publication Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
;Favero, D. ;De Santi, C. ;Mukherjee, K.; ; ; Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors
Journal article2012, Microelectronics Reliability, (52) 9_10, p.2194-2199Publication On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Proceedings paper2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.4B.5-1-4B.5-4Publication Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurements
Proceedings paper2012, International Symposium on Compound Semiconductor, 27/08/2012Publication Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Journal article2022, APPLIED PHYSICS LETTERS, (120) 14, p.143501Publication Vertical stack reliability of GaN-on-Si buffers for low-voltage applications
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019