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Browsing by Author "van den Berg, J.A."

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    A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films

    Sygellou, L
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    Ladas, S
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    Reading, M.A.
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    van den Berg, J.A.
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    Conard, Thierry  
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    De Gendt, Stefan  
    Journal article
    2010-03, Surface and Interface Analysis, (2010) 42, p.1057-1060
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    Advanced front-end processes for the 45nm CMOS technology node

    Collart, E.J.H.
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    Felch, S.B.
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    Graoui, H.
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    Tallavarjula, S.
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    Lindsay, Richard
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    Pawlak, Bartek  
    Oral presentation
    2004, E-MRS Spring Meeting Symposium B: Materials Science Issues in Advanced CMOS Source-Drain Engineering
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    Comparison of electrical measurements with structural analysis of thin high-k hafnium-based films

    Hourdakis, E.
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    Theodoropoulou, M.
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    Nassiopoulou, A.G.
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    Parisini, A.
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    Reading, M.A.
    Proceedings paper
    2009, Analytical Techniques for Semiconductor Materials and Process Characterization 6 - ALTECH, 4/10/2009, p.363-372
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    Comparison of electrical measurements with structural analysis of thin high-k hafnium-based films

    Hourdakis, E.
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    Theodoropoulou, M.
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    Nassiopoulou, A.G.
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    Parisini, A.
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    Reading, M.A.
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.1995
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    Damage accumulation and dopant migration during shallow As and Sb implantation into Si

    Werner, M.
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    van den Berg, J.A.
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    Armour, D.G.
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    Vandervorst, Wilfried  
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    Collart, E.H.J.
    Journal article
    2004, Nuclear Instruments & Methods in Physics Research B, 216, p.67-74
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    High depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si

    van den Berg, J.A.
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    Armour, D.G.
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    Werner, M.
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    Whelan, S.
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    Vandervorst, Wilfried  
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    Clarysse, Trudo
    Proceedings paper
    2002, Proceedings 14th International Conference on Ion Implantation Technology Conference, 22/09/2002, p.597-600
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    High depth resolution depth profile analysis of ultra thin high-k Hf based films using MEIS compared with XTEM, XRF, SE and XPS

    van den Berg, J.A.
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    Reading, M.A.
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    Parisini, A.
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    Kolbe, M.
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    Beckhoff, B.
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    Ladas, S.
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    Petrik, P.
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.1994
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    High depth resolution depth profile analysis of ultra thin high-k Hf based films using MEIS compared with XTEM, XRF, SE and XPS

    van den Berg, J.A.
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    Reading, M. A.
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    Parisini, A.
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    Kolbe, M.
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    Beckhoff, B.
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    Ladas, S.
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    Fried, M.
    Proceedings paper
    2009, Analytical Techniques for Semiconductor Materials and Process Characterization 6, 4/10/2009, p.349-361
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    High resolution, quantitative depth profiling analysis of nm thin hgh-k dielectriclayers using medium energy ion scattering (MEIS)

    van den Berg, J.A.
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    Reading, M.A.
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    Armour, D.G>
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    Bailey, P.
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    Noakes, T.C.Q.
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    Conard, Thierry  
    Proceedings paper
    2009, 19th Ion Beam Analysis Conference - IBA, 7/09/2009
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    Nanolayer characterisation by reference-free X-ray fluorescence analysis with synchrotron radiation

    Kolbe, M.
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    Beckhoff, B.
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    Krumrey, M.
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    Reading, M.A.
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    van den Berg, J.A.
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    Conard, Thierry  
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.1975
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    Physical characterization of the metal/high-k layer interaction upon annealing

    Conard, Thierry  
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    Franquet, Alexis  
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    Vandervorst, Wilfried  
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    Reading, M.
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    van den Berg, J.A.
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.1965
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    Quantitative analysis of thin dielectrica with ultra high resolution ERD, MEIS and RBS

    Vandervorst, Wilfried  
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    Conard, Thierry  
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    Giangrandi, Simone
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    Brijs, Bert
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    Bergmaier, A.
    Meeting abstract
    2007, International Workshop on High-Resolution Depth Profiling, 17/06/2007
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    Recent developments in nuclear methods in support of semiconductor characterization

    Brijs, Bert
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    Bender, Hugo  
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    Huyghebaert, Cedric  
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    Janssens, Tom
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    Vandervorst, Wilfried  
    Proceedings paper
    2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.50-62
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    Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si

    van den Berg, J.A.
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    Werner, M.
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    Armour, D.G.
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    Vandervorst, Wilfried  
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    Clarysse, Trudo
    Meeting abstract
    2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.446
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    TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

    Barozzi, Mario
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    Iacob, E
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    van den Berg, J.A.
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    Reading, M.A.
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    Adelmann, Christoph  
    Meeting abstract
    2011, 18th International Conference on Secondary Ion Mass Spectrometry - SIMS XVIII, 18/09/2011
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    Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition

    Popovici, Mihaela Ioana  
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    Redolfi, Augusto  
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    Aoulaiche, Marc
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    van den Berg, J.A.
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    Douhard, Bastien  
    Journal article
    2015, Microelectronic Engineering, 147, p.108-112

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