Browsing by author "Leys, Frederik"
Now showing items 1-20 of 75
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25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
A step towards a better understanding of silicon passivated (100) Ge p-channel
Pourtois, Geoffrey; Houssa, Michel; De Jaeger, Brice; Leys, Frederik; Kaczer, Ben; Martens, Koen; Caymax, Matty; Meuris, Marc; Groeseneken, Guido; Heyns, Marc (2007) -
Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Bargallo Gonzalez, Mireia; Thomas, Nicole; Simoen, Eddy; Verheyen, Peter; Hikavyy, Andriy; Leys, Frederik; Okuno, Yasutoshi; Vissouvanadin Soubaretty, Bertrand; Van Daele, Benny; Geenen, Luc; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2007) -
Application of HCl gas phase etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Leys, Frederik; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger (2008-05) -
Application of single-wafer wet cleaning prior to epitaxial SiGe process
Sano, K.; Wada, Masayuki; Leys, Frederik; Loo, Roger; Mertens, Paul W.; Snow, James; Izumi, Akira; Miya, Katsuhiko; Eitoku, Atsuro (2008) -
Application of single-wafer wet cleaning prior to epitaxial SiGe process
Sano, Ken-Ichi; Wada, Masayuki; Leys, Frederik; Loo, Roger; Hikavyy, Andriy; Mertens, Paul; Snow, Jim; Izumi, A.; Miya, Katsuhiko; Eitoku, Atsuro (2009) -
Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Challenges of single-wafer wet cleaning for low temperature pre-epitaxial treatment of SiGe
Sano, K.; Leys, Frederik; Dilliway, Gabriela; Loo, Roger; Mertens, Paul; Snow, J.; Izumi, A.; Eitoku, A. (2008) -
Characteristics of Selective Epitaxial SiGe and Si Deposition processes for recessed source/drain applications
Loo, Roger; Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Leys, Frederik; Shamiryan, Denis; De Meyer, Kristin; Absil, Philippe; Caymax, Matty (2005) -
Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications
Loo, Roger; Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Leys, Frederik; Shamiryan, Denis; De Meyer, Kristin; Absil, Philippe; Caymax, Matty (2005) -
Conformal doping of FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Eyben, Pierre; Mody, Jay; Jurczak, Gosia; Nguyen, Duy; Takeuchi, Shotaro; Leys, Frederik; Loo, Roger; Caymax, Matty; Everaert, Jean-Luc (2008) -
Conformal ultra shallow junctions by vapor phase doping with boron
Nguyen, Duy; Leys, Frederik; Takeuchi, Shotaro; Loo, Roger; Caymax, Matty; Eyben, Pierre; Vandervorst, Wilfried (2008-05) -
Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Loo, Roger; Eeckhout, Lieve; Rondas, Dirk; Leys, Frederik; Snow, Jim; Shamiryan, Denis; Demand, Marc; Hoffmann, Thomas Y.; Goodwin, Michael; Fujimoto, Hiromasa; Ravit, Claire; Lee, Byeong Chan; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005-12) -
Difference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °C
Valev, Ventsislav; Leys, Frederik; Caymax, Matty; Verbiest, Thierry (2008) -
Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge
Valev, V.K.; Leys, Frederik; Caymax, Matty; Verbiest, T. (2009) -
Doubling or quadrupling MuGFET Fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency
Rooyackers, Rita; Augendre, Emmanuel; Degroote, Bart; Collaert, Nadine; Nackaerts, Axel; Dixit, Abhisek; Vandeweyer, Tom; Pawlak, Bartek; Ercken, Monique; Kunnen, Eddy; Dilliway, Gabriela; Leys, Frederik; Loo, Roger; Jurczak, Gosia; Biesemans, Serge (2007) -
Effect of chemical growth air filter for wafer storage before epitaxial growth
Wada, Masayuki; Sano, Tomohiro; Leys, Frederik; Dilliway, G.; Loo, Roger; Mertens, Paul; Snow, j.; Izumi, A.; Eitoku, A. (2008) -
Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation
Kaczer, Ben; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Degraeve, Robin; Houssa, Michel; Pourtois, Geoffrey; Leys, Frederik; Meuris, Marc; Groeseneken, Guido (2007) -
Epitaxial growth on germanium: kinetics and layer quality
Bonzom, Renaud; Leys, Frederik; Loo, Roger; Caymax, Matty; Vandervorst, Wilfried (2005) -
Epitaxial strained silicon passivation of the Ge/high-k interface in germanium pMOSFET
Leys, Frederik; Mitard, Jerome; Martens, Koen; Pourtois, Geoffrey; Houssa, Michel; Brunco, D.P.; Kaczer, Ben; De Jaeger, Brice; Loo, Roger; Meuris, Marc; Caymax, Matty; Heyns, Marc (2008)