Browsing by author "Tolle, John"
Now showing items 1-20 of 39
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Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Profijt, Harald; Rosseel, Erik; Tolle, John; Weeks, K.D.; Loo, Roger; Mehta, Sandeep; Maes, Jan (2014-11) -
Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Vohra, Anurag; Loo, Roger; Kohen, David; Margetis, Joe; Tolle, John; Stange, Daniela; Buca, Dan; Vandervorst, Wilfried (2016-11) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019) -
Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019-06) -
Enhanced B doping in CVD-grown GeSn:B using B $d-doping layers
Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John (2018-02) -
Epitaxial GeSn: Impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018) -
Epitaxial GeSn: impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018-05) -
Epitaxial GeSn: Impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018) -
Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019) -
Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019-09) -
Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials
Margetis, Joe; Kohen, David; Porret, Clément; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Loo, Roger; Tolle, John (2019) -
Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
Margetis, Joe; Kohen, David; Porret, Clément; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Rengo, Gianluca; Loo, Roger; Tolle, John; Demos, Alex (2019-10) -
Epitaxial growth schemes for fin and Gate All Around devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Kohen, David; Margetis, Joe; Tolle, John; Langer, Robert (2018) -
Epitaxial growth schemes for Fin and Gate-All-Around devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Kohen, David; Margetis, Joe; Tolle, John; Langer, Robert (2018-05) -
Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
Margetis, Joe; Mosleh, Aboozar; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Dou, Wei; Du, Wei; Bhargava, Nupur; Yu, Shui-Qing; Profijt, Harald; Kohen, David; Loo, Roger; Vohra, Anurag; Tolle, John (2017) -
Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
Porret, Clément; Margetis, Joe; Tolle, John; Sammak, Amir; Scappucci, Giordano; Petersen Barbosa Lima, Lucas; Kohen, David; Kunert, Bernardette; Hikavyy, Andriy; Loo, Roger (2018) -
Gallium-doped SiGe and Ge via MO-RPCVD epitaxy
Margetis, Joe; Porret, Clément; Kumar, Raj; Petersen Barbosa Lima, Lucas; Kohen, David; Loo, Roger; Tolle, John (2018-05) -
Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor
Margetis, Joe; Mosleh, Aboozar; Ghetmiri, Seyed Amir; Bhargava, Nupur; Yu, Shui-Qing; Profijt, Harald; Kohen, David; Loo, Roger; Vohra, Anurag; Tolle, John (2016-05)