Browsing by author "Cartier, Eduard"
Now showing items 1-20 of 35
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A study of relaxation current in high-k gate stacks
Xu, Zhen; Pantisano, Luigi; Kerber, Andreas; Degraeve, Robin; Cartier, Eduard; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2004-03) -
ALD HfO2 surface preparation study
Delabie, Annelies; Caymax, Matty; Maes, Jan; Bajolet, Philippe; Brijs, Bert; Cartier, Eduard; Conard, Thierry; De Gendt, Stefan; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Green, Martin; Tsai, Wilman; Heyns, Marc (2003) -
Characterization of high-k films grown by atomic layer deposition
Vandervorst, Wilfried; Conard, Thierry; Petry, Jasmine; Brijs, Bert; Bender, Hugo; Richard, Olivier; Caymax, Matty; De Gendt, Stefan; Green, Martin; Cartier, Eduard; Copel, M. (2002) -
Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2002) -
Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2003) -
Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003) -
Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
Young, C.D.; Kerber, Andreas; Hou, T.H.; Cartier, Eduard; Brown, G.A.; Bersuker, G.; Kim, Y.; Lim, C.; Gutt, J.; Lysaght, P.; Bennett, J.; Lee, C.H.; Gopalan, S.; Gardner, M.; Zeitzoff, P.; Groeseneken, Guido; Murto, R.W.; Huff, H.R. (2004) -
Charge trapping, mobility degradation and reliability of high-e gate stacks
Cartier, Eduard; Kerber, Andreas; Pantisano, Luigi; Carter, Richard; Kauerauf, Thomas; Degraeve, Robin (2002) -
Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics
Kerber, Andreas; Cartier, Eduard; Pantisano, Luigi; Degraeve, Robin; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2002) -
Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Tsai, Wilman; Ragnarsson, Lars-Ake; Chen, P.J.; Onsia, Bart; Carter, Richard; Cartier, Eduard; Young, Edward; Green, Martin; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2003) -
Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks
Cartier, Eduard; Pantisano, Luigi; Kerber, Andreas; Groeseneken, Guido (2003) -
Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
Kerber, Andreas; Cartier, Eduard; Ragnarsson, Lars-Ake; Rosmeulen, Maarten; Pantisano, Luigi; Degraeve, Robin; Kim, Young-Chang; Groeseneken, Guido (2003) -
Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide
Pantisano, Luigi; Cartier, Eduard; Kerber, Andreas; Degraeve, Robin; Lorenzini, Martino; Rosmeulen, Maarten; Groeseneken, Guido; Maes, Herman (2003) -
Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Carter, Richard; Cartier, Eduard; Caymax, Matty; De Gendt, Stefan; Degraeve, Robin; Groeseneken, Guido; Heyns, Marc; Kauerauf, Thomas; Kerber, Andreas; Kubicek, Stefan; Lujan, Guilherme; Pantisano, Luigi; Tsai, Wilman; Young, Edward (2001) -
Implementation of high-k gate dielectrics - a status update
De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003) -
Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Tsai, Wilman; Chen, Jian; Carter, Richard; Cartier, Eduard; Kluth, Jon; Richard, Olivier; Claes, Martine; Lin, Steven; Nohira, Hiroshi; Conard, Thierry; Caymax, Matty; Young, Edward; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Manabe, Yukiko; Maes, Jan; Rittersma, Chris; Besling, Wim; Roozeboom, F. (2002) -
Interface state passivation in conventional SiO2/HfO2 p-channel FETs
Chen, Jerry; Pantisano, Luigi; Kerber, Andreas; Ragnarsson, Lars-Ake; Cartier, Eduard (2003) -
Investigation of poly-Si/HfO2 gate stacks in a self-aligned 65 nm NMOS process flow
Kubicek, Stefan; Carter, Richard; Cartier, Eduard; Lujan, Guilherme; Kerber, Andreas; Kaushik, Vidya; Chen, P.J.; De Gendt, Stefan; Heyns, Marc (2002) -
Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow
Kubicek, Stefan; Chen, Jerry; Ragnarsson, Lars-Ake; Carter, Richard; Kaushik, Vidya; Lujan, Guilherme; Cartier, Eduard; Henson, Kirklen; Pantisano, Luigi; Beckx, Stephan; Jaenen, Patrick; Boullart, Werner; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2003) -
Issues, achievements and challenges towards integration of high-k dielectrics
Caymax, Matty; De Gendt, Stefan; Vandervorst, Wilfried; Heyns, Marc; Bender, Hugo; Carter, Richard; Conard, Thierry; Degraeve, Robin; Groeseneken, Guido; Kubicek, Stefan; Lujan, Guilherme; Pantisano, Luigi; Petry, Jasmine; Röhr, Erika; Van Elshocht, Sven; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, S.; Tsai, Wilman; Young, Edward; Manabe, Y. (2002)