Browsing by author "Lauwers, Anne"
Now showing items 1-20 of 136
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A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Nackaerts, Axel; Ercken, Monique; Demuynck, Steven; Lauwers, Anne; Baerts, Christina; Bender, Hugo; Boullart, Werner; Collaert, Nadine; Degroote, Bart; Delvaux, Christie; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandervorst, Wilfried; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Jurczak, Gosia; Biesemans, Serge (2004-12) -
A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Kittl, Jorge; Henson, Kirklen; Torregiani, Cristina; Giangrandi, Simone; Surdeanu, Radu; Vandervorst, Wilfried; Mayur, A.; Ross, J.; McCoy, S.; Gelpey, J.; Elliott, K.; Pagès, Xavier; Satta, Alessandra; Lauwers, Anne; Stolk, P.; Maex, Karen (2003) -
A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack
Torregiani, Cristina; Liu, Joy; Vandevelde, Bart; Degryse, Dominiek; Van Dal, Mark; Benedetti, Alessandro; Lauwers, Anne; Maex, Karen (2004) -
A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Lujan, Guilherme; Magnus, Wim; Soree, Bart; Pourghaderi, Mohammad Ali; Veloso, Anabela; Van Dal, Mark; Lauwers, Anne; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2005) -
A novel integration scheme for wafer singulation and selective processing using temporary dry film resist
La Grappe, Alexandre; Visker, Evert; Redolfi, Augusto; Peng, Lan; Muga, Karthik; Huls, David; Vanhaelemeersch, Serge; Lauwers, Anne; Ackaert, Jan (2021) -
A study on (Co1-xNixSi2) Schottky contacts on N-Si(100) substrates
Qu, Xin-Ping; Detavernier, C.; Van Meirhaeghe, R.L.; Cardon, F.; Lauwers, Anne; Maex, Karen; Li, Bin-Zong (2001) -
A TDI test imager in embedded CCD in CMOS technology
Ercan, Alper; Robbelein, Jo; De Munck, Koen; Minoglou, Kiki; Lauwers, Anne; Haspeslagh, Luc; De Moor, Piet (2013) -
Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Rothschild, Aude; Shi, Xiaoping; Everaert, Jean-Luc; Kerner, Christoph; Chiarella, Thomas; Hoffmann, Thomas; Vrancken, Christa; Shickova, Adelina; Yoshinao, H.; Mitsuhashi, Riichirou; Niwa, Masaaki; Lauwers, Anne; Veloso, Anabela; Kittl, Jorge; Absil, Philippe; Biesemans, Serge (2007) -
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007-09) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Shickova, Adelina; Kauerauf, Thomas; Rothschild, Aude; Aoulaiche, Marc; Sahhaf, Sahar; Kaczer, Ben; Veloso, Anabela; Torregiani, Cristina; Pantisano, Luigi; Lauwers, Anne; Zahid, Mohammed; Rost, Tim; Tigelaar, H.; Pas, M.; Fretwell, J.; McCormack, J.; Hoffmann, Thomas; Kerner, Christoph; Chiarella, Thomas; Brus, Stephan; Harada, Yoshinao; Niwa, Masaaki; Kaushik, Vidya; Maes, Herman; Absil, Philippe; Groeseneken, Guido; Biesemans, Serge; Kittl, Jorge (2007) -
Advanced CMOS device technologies for 45nm node and below
Veloso, Anabela; Hoffmann, Thomas; Lauwers, Anne; Yu, HongYu; Severi, Simone; Augendre, Emmanuel; Kubicek, Stefan; Verheyen, Peter; Collaert, Nadine; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007) -
Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices
Yu, HongYu; Veloso, Anabela; Lauwers, Anne; Biesemans, Serge (2007) -
Analysis of junctions formed in strained Si/SiGe substrates
Eneman, Geert; Simoen, Eddy; Lauwers, Anne; Lindsay, Richard; Verheyen, Peter; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Demuynck, Steven; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Analysis of silicide / diffusion contact resistance making use of transmission line stuctures
Akheyar, Amal; Lauwers, Anne; Lindsay, Richard; de Potter de ten Broeck, Muriel; Tempel, Georg; Maex, Karen (2002) -
Applications of Ni-based silicides to 45 nm CMOS and beyond
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Pawlak, Malgorzata; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Kottantharayil, Anil; Pourtois, Geoffrey; Lindsay, Richard; Maex, Karen (2004) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
Ortolland, Claude; Mathew, Suraj; Duffy, Ray; Saino, Kanta; Kim, Chul Sung; Mertens, Sofie; Horiguchi, Naoto; Vrancken, Christa; Chiarella, Thomas; Kerner, Christoph; Absil, Philippe; Lauwers, Anne; Biesemans, Serge; Hoffmann, Thomas Y. (2009) -
Challenges in scaling of CMOS devices towards 65nm node
Jurczak, Gosia; Veloso, Anabela; Rooyackers, Rita; Augendre, Emmanuel; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Lindsay, Richard; Lauwers, Anne; Henson, Kirklen; Severi, Simone; Pollentier, Ivan; De Keersgieter, An (2003-06) -
Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node
Severi, Simone; Henson, Kirklen; Lindsay, Richard; Lauwers, Anne; Pawlak, Bartek; Surdeanu, Radu; De Meyer, Kristin (2004-04)