Browsing by author "Vrancken, Christa"
Now showing items 1-20 of 105
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Nackaerts, Axel; Ercken, Monique; Demuynck, Steven; Lauwers, Anne; Baerts, Christina; Bender, Hugo; Boullart, Werner; Collaert, Nadine; Degroote, Bart; Delvaux, Christie; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandervorst, Wilfried; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Jurczak, Gosia; Biesemans, Serge (2004-12) -
A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Mitard, Jerome; Witters, Liesbeth; Sasaki, Yuichiro; Arimura, Hiroaki; Schulze, Andreas; Loo, Roger; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Cott, Daire; Chiarella, Thomas; Kubicek, Stefan; Mertens, Hans; Ritzenthaler, Romain; Vrancken, Christa; Favia, Paola; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Mocuta, Dan; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016-06) -
A metal hardmask approach for the contact patterning of a 0.186 μm² SRAM cell exposed with EUV lithography
de Marneffe, Jean-Francois; Goossens, Danny; Vandervorst, Alain; Demuynck, Steven; Goethals, Mieke; Hermans, Jan; Van Roey, Frieda; Baudemprez, Bart; Brus, Stephan; Vrancken, Christa (2008) -
Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Rothschild, Aude; Shi, Xiaoping; Everaert, Jean-Luc; Kerner, Christoph; Chiarella, Thomas; Hoffmann, Thomas; Vrancken, Christa; Shickova, Adelina; Yoshinao, H.; Mitsuhashi, Riichirou; Niwa, Masaaki; Lauwers, Anne; Veloso, Anabela; Kittl, Jorge; Absil, Philippe; Biesemans, Serge (2007) -
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007-09) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)
Noda, T.; Eyben, Pierre; Vandervorst, Wilfried; Vrancken, Christa; Rosseel, Erik; Ortolland, Claude; Clarysse, Trudo; Goossens, Jozefien; De Keersgieter, An; Felch, S.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2008) -
Advanced capacitor dielectrics: towards 2x nm DRAM
Kim, Min-Soo; Popovici, Mihaela Ioana; Swerts, Johan; Pawlak, Malgorzata; Tomida, Kazuyuki; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Tielens, Hilde; Vrancken, Christa; Van Elshocht, Sven; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2011-05) -
Advanced USJ for high-k / metal gate CMOS devices
Absil, Philippe; Ortolland, Claude; Aoulaiche, Marc; Rosseel, Erik; Verheyen, Peter; Vrancken, Christa; Horiguchi, Naoto; Noda, Tajii; Felch, Susan; Schreutelkamp, Rob; Hoffmann, Thomas Y. (2008) -
Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
Noda, Taiji; Vandervorst, Wilfried; Felch, S.; Parihar, V.; Cuperus, Aldert; Mcintosh, R.; Vrancken, Christa; Rosseel, Erik; Bender, Hugo; Van Daele, Benny; Niwa, Masaaki; Umimoto, H.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2007) -
Analysis of dopant diffusion and defects in fin structure using an atoministic kinetic Monte Carlo approach
Noda, Taiji; Kambham, Ajay; Vrancken, Christa; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2013) -
Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taji; Witters, Liesbeth; Mitard, Jerome; Rosseel, Erik; Hellings, Geert; Vrancken, Christa; Bender, Hugo; Hoffmann, T.Y.; Horiguchi, Naoto; Vandervorst, Wilfried (2011) -
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Noda, Taiji; Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Vrancken, Christa; Eyben, Pierre; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2012) -
Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taichi; Vandervorst, Wilfried; Vrancken, Christa; Ortolland, Claude; Rosseel, Erik; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Atomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approach
Noda, Taiji; Vrancken, Christa; Vandervorst, Wilfried; Horiguchi, Naoto (2015) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
Ortolland, Claude; Mathew, Suraj; Duffy, Ray; Saino, Kanta; Kim, Chul Sung; Mertens, Sofie; Horiguchi, Naoto; Vrancken, Christa; Chiarella, Thomas; Kerner, Christoph; Absil, Philippe; Lauwers, Anne; Biesemans, Serge; Hoffmann, Thomas Y. (2009) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25 μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Stucchi, Michele; Vrancken, Christa; Deweerdt, Bruno; Maex, Karen (1999)