Browsing by author "de Marneffe, Jean-Francois"
Now showing items 21-40 of 211
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Ar and H2 plasma and neutral/ion beam treatment of EUV resist
De Schepper, Peter; Marinov, Daniil; El Otell, Ziad; Altamirano Sanchez, Efrain; de Marneffe, Jean-Francois; De Gendt, Stefan; Braithwaite, Nicholas St. J. (2015-03) -
Area selective grafting of siloxane molecules on low-k dielectric with resepct to copper surface
Rezvanov, Askar; Gornev, E.S.; de Marneffe, Jean-Francois; Armini, Silvia (2019) -
Area-selective grafting of siloxane molecules on low-k dielectric with respect to copper surface
Rezvanov, Askar; Zyulkov, Ivan; Gornev, E. S.; de Marneffe, Jean-Francois; Armini, Silvia (2018) -
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, A-M; Jech, M.; Waldhoer, D.; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, V.; Stesmans, A.; Horiguchi, Naoto; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2020) -
Atomic layer etching of amorphous Si on MoS2 for selectively patterned MX2 heterostructures
Heyne, Markus; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Neyts, Erik; Radu, Iuliana; De Gendt, Stefan (2017) -
Atomic layer etching of amorphous silicon with selectivity towards MoS2
Heyne, Markus; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Radu, Iuliana; Neyts, Erik C.; De Gendt, Stefan (2017) -
Atomic layer etching of amorphous silicon with selectivity towards MoS2 for novel MX2 heterostructure device concepts
Heyne, Markus; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Neyts, Erik C.; Radu, Iuliana; De Gendt, Stefan (2017) -
Bandgap narrowing in low-k dielectrics
Guo, X; King, S; Xue, P; de Marneffe, Jean-Francois; Baklanov, Mikhaïl; Afanasiev, Valeri; Nishi, Y.; Shohet, J. (2015) -
Challenges for line width / line edge roughness (LWR/lER) improvement in Directed Self-Assembly (DSA) advanced patterning
Chan, BT; Pathangi Sriraman, Hari; Singh, Arjun; El Otell, Ziad; Gronheid, Roel; de Marneffe, Jean-Francois; Piumi, Daniele (2015) -
Characterization and removal of post-etch residues in interconnect patterning
Le, Quoc Toan; de Marneffe, Jean-Francois; Conard, Thierry; Lux, Marcel; Vereecke, Guy (2010) -
Characterization of CF3I for low-k material etching
Samara, Vladimir; Porter, Stephen; de Marneffe, Jean-Francois; Baklanov, Mikhaïl (2013) -
Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
Wu, Meiyi; de Marneffe, Jean-Francois; Opsomer, Karl; Detavernier, Christophe; Delabie, Annelies; Naujok, Philipp; Caner, Oezge; Goodyear, Andy; Cooke, Mike; Saadeh, Qais; Soltwisch, Victor; Scholze, Frank; Philipsen, Vicky (2021) -
CMOS 32nm technology node: business as usual for interconnect damascene patterning?
Beyer, Gerald; Ciofi, Ivan; Van Olmen, Jan; Carbonell, Laure; Versluijs, Janko; Wiaux, Vincent; Op de Beeck, Maaike; Maenhoudt, Mireille; Struyf, Herbert; Hendrickx, Dirk; de Marneffe, Jean-Francois; Vereecke, Guy; Claes, Martine; Bearda, Twan; Volders, Henny; Heylen, Nancy; Travaly, Youssef; Stucchi, Michele; Tokei, Zsolt; Cartuyvels, Rudi (2008-12) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
Comparison between Vacuum Ultra-Violet emission of CF4/Ar and CF3I/Ar plasmas in CCP chamber for low-k etching
Zotovich, Alexey; El Otell, Ziad; de Marneffe, Jean-Francois; Proshina, Olga; Lopaev, Dimitri; Rakhimova, Tatyana; Baklanov, Mikhaïl (2016) -
Comparison between vacuum ultra-violet emission of CF4/Ar and CF3I/Ar plasmas in CCP chamber for low-k etching
Zotovich, A.; El Otell, Ziad; de Marneffe, Jean-Francois; Proshina, O.; Lopaev, D.; Rakhimova, T.; Baklanov, Mikhaïl (2015) -
Contact patterning scheme for organo-siloxane Low-k material as pre-metal dielectric
de Marneffe, Jean-Francois; Le, Quoc Toan; Conard, Thierry; Demuynck, Steven; Struyf, Herbert; Baklanov, Mikhaïl; Boullart, Werner (2005) -
Conversion of a patterned organic resist into a high performance inoriganic hard mask for high resolution pattern transfer
de Marneffe, Jean-Francois; Chan, BT; Spieser, Martin; Vereecke, Guy; Naumov, Sergej; Vanhaeren, Danielle; Knoll, Armin; Wolf, Heiko (2018) -
Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials
Wu, Chen; Li, Yunlong; Lesniewska, Alicja; Varela Pedreira, Olalla; de Marneffe, Jean-Francois; Ciofi, Ivan; Verdonck, Patrick; Baklanov, Mikhaïl; Boemmels, Juergen; De Wolf, Ingrid; Tokei, Zsolt; Croes, Kristof (2015) -
Cryo-etching for integration in micro-electronic : Silicon deep etch for contact and low-k integration in Back end of line (BEOL)
Chanson, Romain; Lefaucheux, Philippe; Dussart, Remi; Shen, Peng; Urabe, Keiichiro; Dussarat, Christian; Maekawa, Kaoru; yatsuda, koichi; Tahara, Shigeru; de Marneffe, Jean-Francois (2017)