Browsing by author "Peng, Lan"
Now showing items 21-40 of 54
-
Edge trimming for surface activated dielectric bonded wafers
Inoue, Fumihiro; Jourdain, Anne; Visker, Jakob; Peng, Lan; Moeller, Berthold; Yokoyama, Yokoyama; Phommahaxay, Alain; Rebibis, Kenneth June; Miller, Andy; Beyne, Eric; Sleeckx, Erik (2017) -
Edge trimming for wafer-to-wafer 3D integration
Inoue, Fumihiro; Visker, Jakob; Jourdain, Anne; Moeller, Berthold; Yokoyama, Kaori; Peng, Lan; Kosemura, Daisuke; De Wolf, Ingrid; Rebibis, Kenneth June; Miller, Andy; Beyne, Eric; Sleeckx, Erik (2016) -
Edge trimming induced defects on direct bonded wafers
Inoue, Fumihiro; Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; Kosemura, Daisuke; De Wolf, Ingrid; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric (2018) -
Enabling backside processing for perforated microfluidic devices
Visker, Jakob; Han, Yang; Visker, Evert; Dang Thi Thuy, Chi; Gocyla, Mateusz; Humbert, Aurelie; Ackaert, Jan; Peng, Lan; Vanhaelemeersch, Serge (2023) -
Enabling ultra-thin die to wafer hybrid bonding for future heterogeneous integrated systems
Phommahaxay, Alain; Suhard, Samuel; Bex, Pieter; Iacovo, Serena; Slabbekoorn, John; Inoue, Fumihiro; Peng, Lan; Kennes, Koen; Sleeckx, Erik; Beyer, Gerald; Beyne, Eric (2019) -
Etch process modules development and integration in 3D SOC applications
Tutunjyan, Nina; Sardo, Stefano; De Vos, Joeri; Van Huylenbroeck, Stefaan; Jourdain, Anne; Peng, Lan; Inoue, Fumihiro; Rassoul, Nouredine; Beyer, Gerald; Beyne, Eric; Miller, Andy; Piumi, Daniele; Walsby, Edward; Ansell, Oliver; Ashraf, Huma; Thomas, Dave (2017) -
Etch process modules development and integration in 3D-SOC applications
Tutunjyan, Nina; Sardo, Stefano; De Vos, Joeri; Van Huylenbroeck, Stefaan; Jourdain, Anne; Peng, Lan; Inoue, Fumihiro; Rassoul, Nouredine; Beyer, Gerald; Beyne, Eric; Miller, Andy; Piumi, Daniele (2018) -
Extreme thinned-wafer bonding using low temperature curable polyimide for advanced waferlevel integrations
Bertheau, Julien; Inoue, Fumihiro; Phommahaxay, Alain; Peng, Lan; Iacovo, Serena; Rassoul, Nouredine; Sleeckx, Erik; Rebibis, Kenneth June; Miller, Andy; Beyer, Gerald; Beyne, Eric; Nakamura, Atsushi (2018) -
First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
Vandooren, Anne; Franco, Jacopo; Wu, Zhicheng; Parvais, Bertrand; Li, Waikin; Walke, Amey; Peng, Lan; Deshpande, Paru; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Ritzenthaler, Romain; Mitard, Jerome; Ragnarsson, Lars-Ake; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018) -
"Hole-in-one TSV", a new via last concept for high density 3DSOC interconnects
De Vos, Joeri; Van Huylenbroeck, Stefaan; Jourdain, Anne; Heylen, Nancy; Peng, Lan; Jamieson, Geraldine; Tutunjyan, Nina; Sardo, Stefano; Miller, Andy; Beyne, Eric (2018) -
Hybrid copper dielectric direct bonding of 200mm CMOS wafers with five metal levels: morphologic, electrical and reliability characterization
Cavaco, Celso; Peng, Lan; Guerrieri, Stefano; Osman, Haris (2017) -
Importance of alignment control during permanent bonding and its impact on via- last alignment for high density 3D interconnects
De Vos, Joeri; Peng, Lan; Phommahaxay, Alain; Van Ongeval, Joost; Miller, Andy; Beyne, Eric; Kurz, Florian; Wagenleiter, Thomas; Wimplinger, Markus; Uhrmann, Thomas (2016) -
Influence of composition of SiCN as interfacial layer on plasma activated direct bonding
Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Phommahaxay, Alain; Verdonck, Patrick; Meersschaut, Johan; Dara, Praveen; Sleeckx, Erik; Miller, Andy; Beyer, Gerald; Beyne, Eric (2019) -
Influence of composition of SiCN for surface activated bonding
Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Phommahaxay, Alain; Visker, Jakob; Verdonck, Patrick; Meersschaut, Johan; Dara, Praveen; Sleeckx, Erik; Miller, Andy; Beyne, Eric (2018) -
Influence of contact area on oxide-oxide fusion bonding quality between 200mm quartz and silicon wafers
Buja, Federico; Humbert, Aurelie; Visker, Jakob; Peng, Lan (2017) -
Influence of Si wafer thinning processes on (Sub)surface defects
Inoue, Fumihiro; Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric; Uedono, Akira (2017) -
Influence of wafer-to-wafer bond alignment on via-last patterning for 3DSOC applications
De Vos, Joeri; Peng, Lan; Van Ongeval, Joost; Phommahaxay, Alain; Miller, Andy; Beyne, Eric; Kurz, Florian; Wagenleiter, Thomas; Wimplinger, Markus; Uhrmann, Thomas (2017) -
Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding
Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; De Vos, Joeri; Schoenaers, B.; Stesmans, A.; Afanas'ev, V. V.; Miller, Andy; Beyer, Gerald; Beyne, Eric (2020) -
Investigation on Low-temperature Temporary Bonding for Microfluidic Devices in Lifescience Applications
Han, Yang; Dang Thi Thuy, Chi; Visker, Evert; Visker, Jakob; Humbert, Aurelie; Peng, Lan (2021) -
Key challenges and opportunities for 3D sequential integration
Vandooren, Anne; Witters, Liesbeth; Franco, Jacopo; Mallik, Arindam; Parvais, Bertrand; Wu, Zhicheng; Li, Waikin; Rosseel, Erik; Hikavyy, Andriy; Peng, Lan; Rassoul, Nouredine; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Waldron, Niamh; Boemmels, Juergen; De Heyn, Vincent; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018-10)