Browsing imec Publications by imec author "96aaa64e938e223bc994751727550abb316e187c"
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Menou, Nicolas; Wang, Xin Peng; Kaczer, Ben; Polspoel, Wouter; Popovici, Mihaela Ioana; Opsomer, Karl; Pawlak, Malgorzata; Knaepen, W.; Detavernier, C.; Blomberg, T.; Pierreux, D.; Swerts, Johan; Maes, Jan; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2008) -
A new HF vapor native oxide removal process for cluster applications
Sprey, Hessel; Storm, Arjen; Maes, Jan; Granneman, E. H. A.; Hendriks, Marton; Röhr, Erika; Caymax, Matty; Decoutere, Stefaan; Heyns, Marc (1998) -
A new HF vapor process for native oxide removal, suited for cluster applications
Storm, Arjen; Sprey, Hessel; Maes, Jan; Granneman, E.; De Blank, Rene; Röhr, Erika; Caymax, Matty; Heyns, Marc (1999) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Profijt, Harald; Rosseel, Erik; Tolle, John; Weeks, K.D.; Loo, Roger; Mehta, Sandeep; Maes, Jan (2014-11) -
ALCVD hafnium silicates for low power gate stacks
Maes, Jan; Laitinen, O.; De Witte, Hilde; Deweerd, Wim; Delabie, Annelies; Conard, Thierry; Brijs, Bert; Wang, C. - G.; Velasco, H.; Wilk, G. (2004) -
ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004) -
ALD HfO2 surface preparation study
Delabie, Annelies; Caymax, Matty; Maes, Jan; Bajolet, Philippe; Brijs, Bert; Cartier, Eduard; Conard, Thierry; De Gendt, Stefan; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Green, Martin; Tsai, Wilman; Heyns, Marc (2003) -
ALD La-based oxides for Vt-tuning in high-k/metal gate stacks
Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Tois, E.; Delabie, Annelies; Ragnarsson, Lars-Ake; Yu, HongYu; Nyns, Laura; Adelmann, Christoph; Van Elshocht, Sven (2007) -
ALD La2O3 cap layers on high-k gates to modify the metal gate work function
Maes, Jan; Swerts, Johan; Tois, E.; Delabie, Annelies; Adelmann, Christoph; Ragnarsson, Lars-Ake; Yu, HongYu (2007) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; Van Bael, Marlies; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2009) -
Application of x-ray fluorescence spectrometry in charaterization of high-k uktra-thin films
Zhao, Chao; Brijs, Bert; Dortu, Fabian; De Gendt, Stefan; Caymax, Matty; Heyns, Marc; Besling, W.; Maes, Jan (2003) -
Atomic layer deposition and remote plasma surface preparation for gate stack applications
Delabie, Annelies; Caymax, Matty; Brijs, Bert; Cartier, E.; Geenen, Luc; Vandervorst, Wilfried; Bajolet, Philippe; Maes, Jan; Tsai, Wilman; De Gendt, Stefan; Heyns, Marc (2003) -
Atomic layer deposition of gadolinium aluminate layers using Gd(iPrCp)3, TMA, and O3 or H2O
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Dewulf, Daan; Hardy, An; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Van Bael, Marlies; Maes, Jan; Jurczak, Gosia; Kittl, Jorge; Van Elshocht, Sven (2010) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Fedorenko, Yanina; Swerts, Johan; Maes, Jan; Tois, E.; Haukka, S.; Wang, C.G; Wilk, G.; Delabie, Annelies; Deweerd, Wim; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium silicate gate dielectric layers
Delabie, Annelies; Pourtois, Geoffrey; Caymax, Matty; De Gendt, Stefan; Ragnarsson, Lars-Ake; Heyns, Marc; Fedorenko, Yanina; Swerts, Johan; Maes, Jan (2007) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
Atomic layer deposition of strontium titanate films using Sr(tBu3Cp)2 and Ti(OMe)4
Popovici, Mihaela Ioana; Van Elshocht, Sven; Menou, Nicolas; Swerts, Johan; Pierreux, Dieter; Delabie, Annelies; Brijs, Bert; Conard, Thierry; Opsomer, Karl; Maes, Jan; Wouters, Dirk; Kittl, Jorge (2010) -
Atomic layer deposition: an enabling technology for microelectronic device manufacturing
Lee, F.; Marcus, S.; Shero, E.; Wilk, G.; Swerts, Johan; Maes, Jan; Blomberg, T.; Delabie, Annelies; Gros-Jean, M.; Deloffre, E. (2007)