Browsing imec Publications by imec author "e5cba79eb3f5135da95e4f9220ff718e8105ec37"
Now showing items 1-20 of 26
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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
B and Ga co-doping in epitaxial SiGe: challenges and opportunities
Porret, Clément; Rengo, Gianluca; Hikavyy, Andriy; Petersen Barbosa Lima, Lucas; Xie, Qi; Douhard, Bastien; Ayyad, Mustafa; Vantomme, André; Loo, Roger (2020) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma
Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Detavernier, Christophe (2011) -
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
Deng, Shaoren; Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Van den Berghe, Sven; Qu, Xinping; Detavernier, Christophe (2011) -
Engineering the IIIV gate stack properties by optimization of the ALD process
Sioncke, Sonja; Ivanov, Tsvetan; Lin, Dennis; Franco, Jacopo; Vais, Abhitosh; Ameen, Mahmoud; Delabie, Annelies; Xie, Qi; Maes, Jan; Givens, Michael; Tang, Fu; Van Elshocht, Sven; Holsteyns, Frank; Barla, Kathy; Collaert, Nadine; Thean, Aaron; De Gendt, Stefan; Heyns, Marc (2014) -
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Kaczer, Ben; Xie, Qi; Maes, Jan Willem; Tang, Fu; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2020) -
First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Sioncke, Sonja; Franco, Jacopo; Vais, Abhitosh; Putcha, Vamsi; Nyns, Laura; Sibaja-Hernandez, Arturo; Rooyackers, Rita; Calderon Ardila, Sergio; Spampinato, Valentina; Franquet, Alexis; Maes, Willem; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Heyns, Marc; Linten, Dimitri; Mitard, Jerome; Thean, Aaron; Mocuta, Dan; Collaert, Nadine (2017) -
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS
Franco, Jacopo; Witters, Liesbeth; Vandooren, Anne; Arimura, Hiroaki; Sioncke, Sonja; Putcha, Vamsi; Vais, Abhitosh; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Subirats, Alexandre; Vaisman Chasin, Adrian; Ragnarsson, Lars-Ake; Kaczer, Ben; Linten, Dimitri; Collaert, Nadine (2017) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
Germanium surface passivation and atomic layer deposition of high- k dielectrics - a tutorial review on Ge-based MOS capacitors
Xie, Qi; Deng, Shaoren; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Jiang, Yu-long; Deduytsche, Davy; Detavernier, Christophe (2012) -
High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing
Xie, Qi; Deng, Shaoren; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Jiang, Yu-long; Qu, Xin-Pin; Deduytsche, Davy; Detavemier, Christophe (2011) -
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Detavernier, Christophe (2010) -
Investigation of low temperature SiP epitaxy on 300 mm Si substrates
Khazaka, Rami; Lima, Lucas; Rosseel, Erik; Hikavyy, Andriy; D'Costa, Vijay; Margetis, Joe; Tolle, John; Xie, Qi (2020) -
Novel gate stack engineering for high mobility Ge nFETs
Arimura, Hiroaki; Cott, Daire; Loo, Roger; Wostyn, Kurt; Boccardi, Guillaume; Franco, Jacopo; Sioncke, Sonja; Xie, Qi; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Chiu, Eddie; Mitard, Jerome; Mocuta, Dan; Collaert, Nadine (2018) -
Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
Vais, Abhitosh; Alian, AliReza; Nyns, Laura; Franco, Jacopo; Sioncke, Sonja; Putcha, Vamsi; Yu, Hao; Mols, Yves; Rooyackers, Rita; Lin, Dennis; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Mocuta, Anda; Collaert, Nadine; De Meyer, Kristin; Thean, Aaron (2016) -
Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform
Zhou, Daisy; Waldron, Niamh; Boccardi, Guillaume; Sebaai, Farid; Merckling, Clement; Eneman, Geert; Sioncke, Sonja; Nyns, Laura; Opdebeeck, Ann; Maes, Jan; Xie, Qi; Givens, M; Tang, F; Jiang, X; Guo, Weiming; Kunert, Bernardette; Teugels, Lieve; Devriendt, Katia; Sibaja-Hernandez, Arturo; Franco, Jacopo; van Dorp, Dennis; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2016) -
Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition
Rampelberg, Geert; Schaekers, Marc; Martens, Koen; Xie, Qi; Deduytsche, Davy; De Schutter, Bob; Blasco, Nicolas; Kittl, Jorge; Detavernier, Christophe (2012)