Browsing by Author "Aymerich, Xavier"
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Publication A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
;Amat, Esteve ;Kauerauf, Thomas ;Rodríguez, Rosana ;Nafría, MontseAymerich, XavierJournal article2013, Microelectronic Engineering, 103, p.144-149Publication A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
;Wu, Qian ;Bayerl, A. ;Porti, Marc ;Martin-Martinez, Javier ;Lanza, MarioRodiguez, RosannaJournal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3118-3124Publication Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack
Journal article2010, Microelectronic Engineering, (87) 1, p.47-50Publication Channel hot-Carrier degradation in short channel devices with high-k/metal gate stacks
Proceedings paper2009, 7a Congreso de Dispositivos Electrónicos - 7th Spanish Conference on Electron Devices, 11/02/2009Publication Channel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks
Journal article2009, IEEE Transactions on Device and Materials Reliability, (9) 3, p.425-430Publication Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
;Amat, Esteve ;Rodriguez, Rosana ;Bargallo Gonzalez, MireiaMartin Martinez, JavierProceedings paper2010, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 1/11/2010Publication Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
;Wu, Qian ;Porti, Marc ;Bayerl, Albin ;Martin-Martinez, JavierRodriguez, RosanaJournal article2015, Journal of Vacuum Science and Technology B, (33) 2, p.22202Publication Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors
Oral presentation2008, 15th Workshop on Dielectrics in Microelectronics - WODIMPublication Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures
Journal article2009, IEEE Transactions on Device and Materials Reliability, (9) 3, p.454-458Publication Gate voltage influence on the channel hot-carrier degradation of high-k-based devices
Journal article2011, IEEE Transactions on Device and Materials Reliability, (11) 1, p.92-96Publication Improved characterization of high-k degradation with vacuum C-AFM
Proceedings paper2008, Synthesis and Metrology of Nanoscale Oxides and Thin Films, 22/03/2008, p.1074-I11-02Publication Influence of vacuum environment in conductive AFM measurements on advanced MOS gate dielectrics
Oral presentation2007, Trends in Nanotechnology conference - TNT 2007Publication Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
;Aguilera, Lidia ;Polspoel, Wouter ;Volodin, Alexander ;Van Haesendonck, ChrisPorti, MarcJournal article2008, Journal of Vacuum Science and Technology B, (26) 4, p.1445-1449Publication Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
Journal article2008, Microelectronics Reliability, (48) 8_9, p.1521-1524Publication Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors
;Bayerl, Albin ;Lanza, Mario ;Aguilera, Lidia ;Porti, Marc ;Nafria, MontserratAymerich, XavierJournal article2013, Microelectronics Reliability, (53) 6, p.867-871Publication Nanoscale effects of annealing on the electrical characteristic of hafnium based devices measured in a vacuum environment
Proceedings paper2008, IEEE International Reliability Physics Symposium Proceedings - IRPS, 27/04/2008, p.657-658Publication Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions
;Moras, Miquel ;Martin-Martinez, Javier ;Rodriguez, Rosanna ;Nafria, MontseAymerich, XavierProceedings paper2013, International Semiconductor Device Research Symposium - ISDRS, 11/12/2013Publication New insights into the wide ID range Channel Hot-Carrier degradation in high-k based devices
;Amat, Esteve ;Rodríguez, Rosana ;Nafria, Montse ;Aymerich, XavierKauerauf, ThomasProceedings paper2009, 47th Annual IEEE International Reliability Physics Symposium - IRPS, 26/04/2009, p.1028-1032Publication Processing dependences of CHC degradation on strained-Si pMOSFETs
;Amat, Esteve ;Martin Martinez, Javier ;Bargallo Gonzalez, MireiaRodriguez, RosanaMeeting abstract2010, 16th Workshop on Dielectrics in Microelectronics - WoDIM, 28/06/2010Publication Simulation of the hot-carrier degradation in short channel transitors with high-K dielectric
Journal article2010, International Journal of Numerical Modelling, (23) 4_5, p.315-323