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Browsing by Author "Aymerich, Xavier"

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    A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

    Amat, Esteve
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    Kauerauf, Thomas
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    Rodríguez, Rosana
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    Nafría, Montse
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    Aymerich, Xavier
    Journal article
    2013, Microelectronic Engineering, 103, p.144-149
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    A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs

    Wu, Qian
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    Bayerl, A.
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    Porti, Marc
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    Martin-Martinez, Javier
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    Lanza, Mario
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    Rodiguez, Rosanna
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 9, p.3118-3124
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    Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

    Amat, Esteve
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Rodríguez, Rosana
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    Nafría, Montse
    Journal article
    2010, Microelectronic Engineering, (87) 1, p.47-50
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    Channel hot-Carrier degradation in short channel devices with high-k/metal gate stacks

    Amat, Esteve
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Nafría, Montse
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    Aymerich, Xavier
    Proceedings paper
    2009, 7a Congreso de Dispositivos Electrónicos - 7th Spanish Conference on Electron Devices, 11/02/2009
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    Channel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks

    Amat, Esteve
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    De Keersgieter, An  
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    Rodríguez, Rosana
    Journal article
    2009, IEEE Transactions on Device and Materials Reliability, (9) 3, p.425-430
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    Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

    Amat, Esteve
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    Rodriguez, Rosana
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    Bargallo Gonzalez, Mireia
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    Martin Martinez, Javier
    Proceedings paper
    2010, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 1/11/2010
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    Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach

    Wu, Qian
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    Porti, Marc
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    Bayerl, Albin
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    Martin-Martinez, Javier
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    Rodriguez, Rosana
    Journal article
    2015, Journal of Vacuum Science and Technology B, (33) 2, p.22202
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    Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors

    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Aguilera, Lidia
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    Porti, Marc
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    Nafria, Montserrat
    Oral presentation
    2008, 15th Workshop on Dielectrics in Microelectronics - WODIM
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    Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures

    Amat, Esteve
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Rodríguez, Rosana
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    Nafría, Montse
    Journal article
    2009, IEEE Transactions on Device and Materials Reliability, (9) 3, p.454-458
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    Gate voltage influence on the channel hot-carrier degradation of high-k-based devices

    Amat, Esteve
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Rodríguez, Rosana
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    Nafria, Montse
    Journal article
    2011, IEEE Transactions on Device and Materials Reliability, (11) 1, p.92-96
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    Improved characterization of high-k degradation with vacuum C-AFM

    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Aguilera, Lidia
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    Porti, Marc
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    Nafria, Montserrat
    Proceedings paper
    2008, Synthesis and Metrology of Nanoscale Oxides and Thin Films, 22/03/2008, p.1074-I11-02
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    Influence of vacuum environment in conductive AFM measurements on advanced MOS gate dielectrics

    Aguilera, Lidia
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    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Nafria, Montserrat
    Oral presentation
    2007, Trends in Nanotechnology conference - TNT 2007
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    Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

    Aguilera, Lidia
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    Polspoel, Wouter
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    Volodin, Alexander
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    Van Haesendonck, Chris
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    Porti, Marc
    Journal article
    2008, Journal of Vacuum Science and Technology B, (26) 4, p.1445-1449
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    Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Aguilera, Lidia
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    Porti, Marc
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    Nafria, Montserrat
    Journal article
    2008, Microelectronics Reliability, (48) 8_9, p.1521-1524
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    Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

    Bayerl, Albin
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    Lanza, Mario
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    Aguilera, Lidia
    ;
    Porti, Marc
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    Nafria, Montserrat
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    Aymerich, Xavier
    Journal article
    2013, Microelectronics Reliability, (53) 6, p.867-871
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    Nanoscale effects of annealing on the electrical characteristic of hafnium based devices measured in a vacuum environment

    Aguilera, Lidia
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    Polspoel, Wouter
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    Porti, Marc
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    Vandervorst, Wilfried  
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    Nafria, Montserrat
    Proceedings paper
    2008, IEEE International Reliability Physics Symposium Proceedings - IRPS, 27/04/2008, p.657-658
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    Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions

    Moras, Miquel
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    Martin-Martinez, Javier
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    Rodriguez, Rosanna
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    Nafria, Montse
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    Aymerich, Xavier
    Proceedings paper
    2013, International Semiconductor Device Research Symposium - ISDRS, 11/12/2013
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    New insights into the wide ID range Channel Hot-Carrier degradation in high-k based devices

    Amat, Esteve
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    Rodríguez, Rosana
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    Nafria, Montse
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    Aymerich, Xavier
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    Kauerauf, Thomas
    Proceedings paper
    2009, 47th Annual IEEE International Reliability Physics Symposium - IRPS, 26/04/2009, p.1028-1032
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    Processing dependences of CHC degradation on strained-Si pMOSFETs

    Amat, Esteve
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    Martin Martinez, Javier
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    Bargallo Gonzalez, Mireia
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    Rodriguez, Rosana
    Meeting abstract
    2010, 16th Workshop on Dielectrics in Microelectronics - WoDIM, 28/06/2010
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    Simulation of the hot-carrier degradation in short channel transitors with high-K dielectric

    Amat, Esteve
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    Kauerauf, Thomas
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    Degraeve, Robin  
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    Rodríguez, Rosana
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    Nafría, Montse
    Journal article
    2010, International Journal of Numerical Modelling, (23) 4_5, p.315-323
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