Browsing by Author "Kim, Young-Chang"
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Publication A methodology for the characterization of topography induced immersion bubble defects
Proceedings paper2005, Optical Microlithography XVIII, 27/02/2005, p.154-163Publication Angle resolved XPS characterization of the formation of Cl and Br bonds in poly-silicon etching and its cleaning
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.153-156Publication Angle resolved XPS characterization of the formation of Cl and Br bonds in poly-silicon etching and its cleaning
Oral presentation1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication ArF lithography options for 100-nm technologies
Proceedings paper2001, Optical Microlithography XIV, 27/02/2001, p.179-190Publication ArF lithography options for 100nm technologies
Journal article2001, Semiconductor Fabtech, 14, p.157-165Publication ArF lithography with combination of moderate OAI and attenuated PSM
Oral presentation2001, 21st Annual BACUS Symposium on Photomask Technology; October 2001; Monterey, CA, USA.Publication AttPSM CD control: mask bias and flare effects
Proceedings paper2002, Optical Microlithography XV, 5/03/2002, p.1041-1053Publication Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM
Proceedings paper2002, 21st Annual BACUS Symposium on Photomask Technology, 3/10/2001, p.954-967Publication Characterization of the post dry etch cleaning of the silicon surface prior to silicon epitaxial growth
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.97-100Publication Characterization of the post dry etch cleaning of the silicon surface prior to silicon epitaxial growth
Oral presentation1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
Journal article1999, J. Electrochem. Soc., (146) 4, p.1549-1556Publication Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
Proceedings paper2003, VLSI Technology Symposium, 10/06/2003, p.159-160Publication Evaluation of stray light and quantitative analysis of its impact on lithography
Journal article2005, Journal of Microlithography, Microfabrication, and Microsystems, (4) 4, p.43002Publication Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
Journal article2003, IEEE Electron Device Letters, (24) 2, p.87-89Publication Protective films formed by RIE of Co and Ti silicides and ways of their removal
Proceedings paper1996, Proceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 23/09/1996, p.171-174Publication Removal of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surface
Oral presentation1998, American Vacuum Society 45th International Symposium; 2-6 Nov. 1998; Baltimore, MD, USA.Publication Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas
Journal article1997, J. Vacuum Science and Technology A, (15) 6, p.3005-3014Publication The formation and removal of residue formed during TiN fluorocarbon plasma etching
Proceedings paper1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.610-616Publication The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.291-294