Browsing by Author "Kottantharayil, Anil"

A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages

A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node

Analysis of the parasitic S/D resistance in multiple-gate FETs

Applications of Ni-based silicides to 45 nm CMOS and beyond

CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach

Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications

Deposition of Poly-SiGe with RTCVD

Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices

Dopant profiling in NixSi1-x gates with SIMS

Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS

Emerging device solutions for the post-classical CMOS era

Extraction of the top and sidewall mobility in FinFETs and the impact of fin-patterning processes and gate dielectrics on mobility

Geometry dependence of low frequency noise in n- and p- channel MuGFETs

GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

High-k dielectrics integration prospects

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface

Integration challenges for multi-gate devices

Integration of SPER and FUSI in a pFET