Browsing by Author "Lee, Jae Woo"
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Publication 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Journal article2013-03, Applied Physics Letters, (102) 7, p.73503Publication Assessment of the impact of inelastic tunneling on the frequency-depth conversion from low-frequency noise spectra
Journal article2014, IEEE Transactions on Electron Devices, (61) 2, p.634-637Publication Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm
;Choi, Seoyeon ;Park, Dong Geun ;Kim, Min Jung ;Bang, Seain ;Kim, Jungchun ;Jin, SeungheeHuh, Ki SeokJournal article2023, ADVANCED INTELLIGENT SYSTEMS, (5) 1, p.Art. 2200302Publication Automatic prediction of MOSFETs threshold voltage by machine learning algorithms
;Choi, Seoyeon ;Park, Dong Geun ;Kim, Min Jung ;Bang, Seain ;Kim, Jungchun ;Jin, SeungheeHuh, Ki SeokProceedings paper2023, 7th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), MAR 07-10, 2023Publication Bulk FinFET Fin height control using Gas Cluster Ion Beam (GCIB) - Location Specific Processing (LSP)
Proceedings paper2013, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 24/09/2013, p.706-707Publication Comparison of temperature dependent carrier transport in FinFET and gate-all-Around nanowire FET
Journal article2020, Applied Sciences, (10) 8, p.2979Publication Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications
Journal article2022, ADVANCED MATERIALS INTERFACES, (9) 9, p.Art. 2102488Publication Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET
Journal article2021, NANOTECHNOLOGY, (32) 16, p.165202Publication Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Proceedings paper2013, Symposium on VLSI Technology, 11/06/2013, p.T196-T197Publication Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Proceedings paper2013, Symposium on VLSI Technology - VLSIT, 10/06/2013, p.196-197Publication Impact of multi-gate device architectures on digital and analog circuits and its implications on system-on-chip technologies
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.448-451Publication Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process
Journal article2014-03, IEEE Transactions on Device and Materials Reliability, (14) 1, p.408-412Publication Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.542-545Publication Low frequency noise analysis for post-treatment of replacement metal gate FinFET
Journal article2013, IEEE Transactions on Electron Devices, (60) 9, p.2960-2962Publication Low frequency noise performance of gate-first and replacement metal gate CMOS technologies
Proceedings paper2013, IEEE International Conference on Electron Devices and Solid-State Circuits - EDSSC, 3/06/2013, p.1-2Publication Low-frequency-noise-based oxide trap profiling in replacement high-k/metal gate pMOSFETs
Journal article2014, ECS Journal of Solid State Science and Technology, (3) 6, p.Q127-Q131Publication Low-frequency-noise-based oxide trap profiling in replacement high-k/metal-gate pMOSFETs
Meeting abstract2013, 224th ECS Fall Meeting: Symposium on ULSI Process Integration, 27/10/2013, p.2246Publication Mobility analysis of surface roughness scattering in FinFET devices
;Lee, Jae Woo; ;Mouis, Mireille ;Kim, Gyu Tae; Hoffmann, Thomas Y.Journal article2011, Solid-State Electronics, (62) 1, p.195-201Publication Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
; ;Choi, Junhee; ; ;Lee, Jae Woo; Journal article2021, ADVANCED FUNCTIONAL MATERIALS, (31) 23, p.2100625Publication Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si fins
; ; ; ; ;Lee, Jae WooBrunco, DavidProceedings paper2014, Symposium on VLSI Technology, 9/06/2014, p.58-59