Browsing by Author "Rzepa, Gerhard"
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Publication A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Journal article2018, Microelectronics Reliability, 81, p.186-194Publication A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
Journal article2024, MICROMACHINES, (15) 7, p.Art. 829Publication Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
; ; ; ; Proceedings paper2019, 2019 IRPS IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-7Publication Border trap based modeling of SiC transistor transfer characteristics
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/11/2018, p.1-5Publication BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.5C-4.1-5C-4.7Publication BTI reliability improvement strategies in low thermal budget gate dtacks for 3D sequential integration
Proceedings paper2018-12, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.787-790Publication Characterization and modeling of reliability issues in nanoscale devices
Proceedings paper2015, IEEE International Symposium on Circuits and Systems - ISCAS, 24/05/2015, p.2445-2448Publication Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.175-178Publication Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology
Proceedings paper2022, 52nd IEEE European Solid-State Device Research Conference (ESSDERC), SEP 19-22, 2022, p.265-268Publication COMPHY - A compact-physics framework for unified modeling of BTI
Journal article2018, Microelectronics Reliability, 85, p.49-65Publication Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Journal article2023, MICROELECTRONICS RELIABILITY, (146) July, p.Art. 115004Publication Complete extraction of defect bands responsible for instabilities in n and pFinFETs
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.208-209Publication DTCO of Nanosheet and Forksheet Architectures: Exploring Dielectric Walls, Contacting Schemes, and Active Regions for Optimized RO Performance
Proceedings paper2024, 8th Electron Devices Technology & Manufacturing Conference (EDTM), MAR 03-06, 2024, p.226-228Publication Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Publication Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Journal article2019, IEEE Transactions on Electron Devices, (66) 1, p.241-248Publication Improved PBTI reliability in junction-less nFETs fabricated at low thermal budget for 3D sequential integration
Proceedings paper2018, International Integrated Reliability Workshop - IIRW 2018, 7/10/2018, p.5.2Publication Low thermal budget dual-dipole gate stacks engineered for sufficient BTI reliability in novel integration schemes
Proceedings paper2019-12, IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2019, 12/03/2019, p.215-216Publication Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs
Proceedings paper2015, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2015, p.144-147Publication Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Journal article2020, IEEE Transactions on Electron Devices, (67) 8, p.3315-3322Publication Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Proceedings paper2020, IEEE International Integrated Reliability Workshop (IIRW), OCT 04-NOV 01, 2020, p.31-34