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Browsing by Author "Travaly, Youssef"

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    300mm wafer thinning and backside passivation compatibility with temporary wafer bonding for 3D stacked IC applications

    Jourdain, Anne  
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    Buisson, Thibault
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    Phommahaxay, Alain  
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    Privett, Marc
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    Wallace, Daniel
    Meeting abstract
    2010-11, IEEE International 3D System Integration Conference - 3DIC, 16/11/2010
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    3D stacked IC demonstrator using hybrid collective die-to-wafer bonding with copper through silicon vias (TSV)

    Van Olmen, Jan  
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    Coenen, Jens
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    Dehaene, Wim  
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    De Meyer, Kristin  
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    Huyghebaert, Cedric  
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    Jourdain, Anne  
    Proceedings paper
    2009, IEEE 3D-IC, 28/09/2009
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    3D stacked ICs using Cu TSVs and die to wafer hybrid collective bonding

    Katti, Guruprasad
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    Mercha, Abdelkarim  
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    Van Olmen, Jan  
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    Huyghebaert, Cedric  
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    Jourdain, Anne  
    Proceedings paper
    2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.357-360
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    3D technology roadmap and status

    Marchal, Pol
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    Van der Plas, Geert  
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    Eneman, Geert  
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    Moroz, V.
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    Badaroglu, Mustafa  
    Proceedings paper
    2011, IEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM, 8/05/2011
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    3D wafer-level packaging die stacking using spin-on-dielectric polymer liner through-silicon vias

    Civale, Yann
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    Sabuncuoglu Tezcan, Deniz  
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    Philipsen, Harold  
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    Duval, Fabrice  
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    Jaenen, Patrick  
    Journal article
    2011, IEEE Transactions on Components, Packaging and Manufacturing Technology, (1) 6, p.833-840
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    A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film

    Travaly, Youssef
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    Tsutsue, M.
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    Ikeda, Atsushi
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    Verdonck, Patrick  
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    Tokei, Zsolt  
    Oral presentation
    2007, Advanced Metallization Conference: 17th Asian Session
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    A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates

    Travaly, Youssef
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    Schuhmacher, Jorg
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    Baklanov, Mikhaïl
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    Giangrandi, Simone
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    Richard, Olivier  
    Journal article
    2005-10, Journal of Applied Physics, (98) 8, p.083515-1-083515-9
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    Aggressive scaling of Cu lowk: impact on metrology

    Maex, Karen  
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    Brongersma, Sywert  
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    Iacopi, Francesca
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    Vanstreels, Kris  
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    Travaly, Youssef
    Proceedings paper
    2005, Characterization and Metrology for ULSI Technology, 14/03/2005, p.475-481
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    Air-gap formation by UV-assisted decomposition of CVD material

    Pantouvaki, Marianna  
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    Humbert, Aurelie  
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    Van Besien, Els  
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    Camerotto, Elisabeth  
    Meeting abstract
    2008, 17th Workshop Materials for Advanced Metallization, 2/03/2008
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    Air-gap formation by UV-assisted decomposition of CVD material

    Pantouvaki, Marianna  
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    Humbert, Aurelie  
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    Van Besien, Els  
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    Camerotto, Elisabeth  
    Journal article
    2008, Microelectronic Engineering, (85) 10, p.2071-2074
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    Atomic layer deposited barriers for copper interconnects

    Schuhmacher, Jorg
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    Martin Hoyas, Ana
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    Ernur, Didem  
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    Tokei, Zsolt  
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    Travaly, Youssef
    Meeting abstract
    2004, AVS 51 International Symposium, 14/11/2004, p.TF-MoM1
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    Bottom-up engineering of subnanometer copper diffusion barriers using NH2-derived self assembled monolayers

    Maestre Caro, Arantxa
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    Armini, Silvia  
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    Richard, Olivier  
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    Maes, Guido
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    Borghs, Gustaaf  
    Journal article
    2010, Advanced Functional Materials, (20) 7, p.1125-1131
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    Challenges for structural stability of ultra-low-k based interconnects

    Iacopi, Francesca
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    Brongersma, Sywert  
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    Vandevelde, Bart  
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    Travaly, Youssef
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    Maex, Karen  
    Journal article
    2004, Microelectronic Engineering, (75) 1, p.54-62
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    Challenges in the implentation of low-k dielectrics in the back-end of line

    Hoofman, Romano  
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    Brom - Verheyden, Greja  
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    Michelon, Julien
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    Iacopi, Francesca
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    Travaly, Youssef
    Journal article
    2005, Microelectronic Engineering, 80, p.337-344
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    Characterization and optimization of Cu-low k for 45nm and beyond

    Maex, Karen  
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    Brongersma, Sywert  
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    Iacopi, Francesca
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    Travaly, Youssef
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    Tokei, Zsolt  
    Proceedings paper
    2004, Proceedings 3rd Hiroshima International Workshop on Nanoelectronics for Tera-Bit Information Processing, 6/12/2004, p.10-18
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    Characterization and optimization of porogen based PECVD deposited extreme low-k materials as a function of UV-cure time

    Verdonck, Patrick  
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    De Roest, David  
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    Kaneko, Shinya
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    Caluwaerts, Rudy  
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    Tsuji, Naoto
    Journal article
    2007, Surface and Coatings Technology, (201) 22_23, p.9264-9268
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    Characterization of atomic layer deposited nanoscale structure on dense dielectric substrates by X-ray reflectivity

    Travaly, Youssef
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    Schuhmacher, J.
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    Martin Hoyas, Ana
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    Abell, T.
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    Sutcliffe, Vic
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    Jonas, M.
    Journal article
    2005, Microelectronic Engineering, (82) 3_4, p.639-644
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    Characterization of PVD TaN and ALD WNxCy copper diffusion barriers on a porous CVD low-k material

    Travaly, Youssef
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    Kemeling, N.
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    Maenhoudt, Mireille
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    Peeters, S.
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    Tokei, Zsolt  
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    Abell, Thomas
    Proceedings paper
    2004, Advanced Metallization Conference 2003, 21/10/2003, p.723-728
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    Characterization of the growth of atomic layer deposited WNxCy films on various substrates

    Martin Hoyas, Ana
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    Travaly, Youssef
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    Schuhmacher, Jorg
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    Sajavaara, Timo
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    Whelan, Caroline
    Oral presentation
    2005, AVS 2005
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    Cleaning requirement in the thinning module for 3D-Stacked IC (3D-SIC) integration

    Wostyn, Kurt  
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    Zhao, Ming  
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    Cui, Hushan
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    Laermans, Patrick  
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    Jourdain, Anne  
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    Verbinnen, Greet  
    Meeting abstract
    2010, 10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS, 19/09/2010, p.188-189
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