Browsing by Author "Van Dal, Mark"
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Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack
Proceedings paper2004, EuroSimE: 5th Int. Conf. on Thermal & Mechanical Simulation and Experiments in Micro-Electronics and Micro-Systems, 9/05/2004, p.61-68Publication A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Proceedings paper2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.489-492Publication Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
Proceedings paper2009, Silicon-on-Insulator Technology and Devices 14, 24/05/2009, p.45-54Publication Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Journal article2004, Japanese J. of Appl. Phys. Part 1, (43) 4B, p.1778-1783Publication Application of HCl etch in the production of novel devices
Meeting abstract2008, 213th ECS Meeting, 18/05/2008, p.647Publication Application of HCl gas phase etch in the production of novel devices
Proceedings paper2008-05, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS. 4: New Materials, Processes, and Equipment, 18/05/2008, p.329-335Publication Applications of Ni-based silicides to 45 nm CMOS and beyond
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.31-42Publication Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Proceedings paper2008, IEEE International Electron Devices Meeting - IEDM, 15/12/2008, p.535-538Publication Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Proceedings paper2009-10, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.1040-1041Publication CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Proceedings paper2005-12, Technical Digest International Electron Devices Meeting - IEDM, 5/12/2005, p.661-664Publication CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Proceedings paper2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.15-22Publication CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Proceedings paper2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.198-199Publication Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.197-204Publication Conformal doping for FINFET's: a fabrication and metrology challenge
Oral presentation2008, Stanford & Tohoku University Joint Open Workshop on 3D Transistor and its ApplicationsPublication Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Proceedings paper2005, Technical Digest International Electron Devices Meeting (IEDM), 5/12/2005, p.27/05/2001-27/05/2004Publication Effects of alloying on properties of NiSi for CMOS applications
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and technology, 12/04/2004Publication Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride
Journal article2023, ACS APPLIED ELECTRONIC MATERIALS, (5) 2, p.858-864Publication Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Publication Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1H5-C1H13
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