Browsing by Author "Zahid, Mohammed"
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Publication A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
; ; ; ; Zahid, MohammedJournal article2010, Solid-State Electronics, (54) 11, p.1384-1391Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Proceedings paper2010, IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Journal article2011, Electrochemical and Solid-State Letters, (14) 7, p.271-273Publication Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?
Journal article2005, IEEE Electron Device Letters, (26) 10, p.773-775Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.32-33Publication Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
Proceedings paper2009, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.294-295Publication Applying complementary trap characterization technique to crystalline g-phase-Al2O3 for improved understanding of nonvolatile memory operation and reliability
Journal article2010, IEEE Transactions on Electron Devices, (57) 11, p.2907-2916Publication Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication Characterization of hexagonal rare-earth auminates for application in flash memories
Proceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 11/04/2011, p.815-818Publication Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection
Journal article2007, Microelectronic Engineering, (84) 9_10, p.1943-1946Publication Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs
Proceedings paper2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.3C.5Publication Defect profiling in the SiO2/Al2O3 interface using variable Tcharge-Tdischarge amplitude charge pumping (VT2ACP)
Proceedings paper2009, 47th Annual IEEE International Reliability Physics Symposium - IRPS, 26/04/2009, p.21-25Publication Defects characterization of hybrid floating gate/ inter-gate dielectric interface in flash memory
; ; Proceedings paper2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.2E-3.1-2E-3.5Publication Defects generation in SiO2/HfO2 studied with variable Tcharge-Tdischarge charge pumping (VT2CP)
Proceedings paper2007, 45th Annual International Reliability Physics Symposium, 15/04/2007, p.55-60Publication Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Proceedings paper2005-12, Technical Digest International Electronic Devices Meeting (IEDM), 5/12/2005, p.16/06/2001-16/06/2004Publication Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
; ; ; Zahid, MohammedJournal article2010-12, Microelectronic Engineering, (87) 12, p.2614-2619Publication Effect of high temperature annealing on tunnel oxide properties in TANOS devices
Journal article2011, Microelectronic Engineering, (88) 7, p.1155-1158Publication Electrical defects in dielectrics for flash memories studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIC)
Proceedings paper2009, International Conference on Solid State Materials and Devices - SSDM, 7/10/2009Publication Electron trap profiling near Al2O3/ gate interface in TANOS stack using gate-side-trap spectroscopy by charge injection and sensing
Journal article2010, IEEE Electron Device Letters, (31) 10, p.1158-1160
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