Browsing by Author "Zanoni, Enrico"

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction

Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Breakdown investigation in GaN-based MIS-HEMT devices

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions

Degradation of AlGaN/GaN HEMTs below the "critical voltage": a time-dependent analysis

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model

Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs

Exploration of gate trench module for vertical GaN devices

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors

Gate module study for performance improvement in vertical GaN device

Gate stability of GaN-based HEMTs with p-type gate