Browsing by author "Yu, HongYu"
Now showing items 1-20 of 47
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Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Ragnarsson, Lars-Ake; Chang, Vincent; Yu, HongYu; Cho, Hag-Ju; Conard, Thierry; Yin, KaiMin; Delabie, Annelies; Swerts, Johan; Schram, Tom; De Gendt, Stefan; Biesemans, Serge (2007-06) -
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007-09) -
Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics
Veloso, Anabela; Yu, HongYu; Chang, S.Z.; Adelmann, Chris; Onsia, Bart; Brus, Stephan (2007) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Advanced CMOS device technologies for 45nm node and below
Veloso, Anabela; Hoffmann, Thomas; Lauwers, Anne; Yu, HongYu; Severi, Simone; Augendre, Emmanuel; Kubicek, Stefan; Verheyen, Peter; Collaert, Nadine; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007) -
Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices
Yu, HongYu; Veloso, Anabela; Lauwers, Anne; Biesemans, Serge (2007) -
ALD La-based oxides for Vt-tuning in high-k/metal gate stacks
Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Tois, E.; Delabie, Annelies; Ragnarsson, Lars-Ake; Yu, HongYu; Nyns, Laura; Adelmann, Christoph; Van Elshocht, Sven (2007) -
ALD La2O3 cap layers on high-k gates to modify the metal gate work function
Maes, Jan; Swerts, Johan; Tois, E.; Delabie, Annelies; Adelmann, Christoph; Ragnarsson, Lars-Ake; Yu, HongYu (2007) -
Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Yu, HongYu; Groeseneken, Guido (2008) -
Challenges with respect to high-k/metal gate stack etching and cleaning
Vos, Rita; Arnauts, Sophia; Bovie, Inge; Onsia, Bart; Garaud, Sylvain; Xu, Kaidong; Yu, HongYu; Kubicek, Stefan; Rohr, Erika; Schram, Tom; Veloso, Anabela; Conard, Thierry; Leunissen, Peter; Mertens, Paul (2007) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008) -
Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Adelmann, Christoph; Onsia, Bart; Lehnen, Peer; Kauerauf, Thomas; Brus, Stephan; Absil, Philippe; Biesemans, Serge (2007-11) -
Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Yu, HongYu; Singanamalla, Raghunath; Ragnarsson, Lars-Ake; Chang, Vincent; Cho, Hag-Ju; Mitsuhashi, Riichirou; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Chang, Shou-Zen; Yin, K.M.; Schram, Tom; Kubicek, Stefan; De Gendt, Stefan; Absil, Philippe; De Meyer, Kristin; Biesemans, Serge (2007) -
Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Yu, HongYu; Singanamalla, Raghunath; Opsomer, Karl; Augendre, Emmanuel; Simoen, Eddy; Kittl, Jorge; Kubicek, Stefan; Severi, Simone; Shi, Xiaoping; Brus, Stephan; Zhao, Chao; de Marneffe, Jean-Francois; Locorotondo, Sabrina; Shamiryan, Denis; Van Dal, Mark; Veloso, Anabela; Lauwers, Anne; Niwa, Masaaki; Maex, Karen; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Delabie, Annelies; Everaert, Jean-Luc; Singanamalla, Raghunath; Kerner, Christoph; Vrancken, Christa; Brus, Stephan; Absil, Philippe; Hoffmann, Thomas; Biesemans, Serge (2007-09) -
Deposition of Poly-SiGe with RTCVD
Shi, Xiaoping; Schaekers, Marc; Brus, Stephan; Zhao, Chao; Brijs, Bert; Yu, HongYu; Kottantharayil, Anil (2005-10) -
DyScHfO as high-k gate dielectric: structural and electrical properties
Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Conard, Thierry; Franquet, Alexis; Zhao, Chao; Ragnarsson, Lars-Ake; Chang, Vincent S.; Cho, Hag-Ju; Yu, HongYu; De Gendt, Stefan (2007) -
Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)
Singanamalla, Raghunath; Yu, HongYu; Van Daele, Benny; Kubicek, Stefan; De Meyer, Kristin (2007) -
Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Chang, Vincent; Ragnarsson, Lars-Ake; Yu, HongYu; Aoulaiche, Marc; Conard, Thierry; Yin, KaiMin; Schram, Tom; Maes, Jan Willem; De Gendt, Stefan; Biesemans, Serge (2007)