Browsing by author "Sleeckx, Erik"
Now showing items 1-20 of 79
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3D IC process development for enabling chip-on-chip and chip on wafer multi-stacking at assembly
Daily, Robert; Capuz, Giovanni; Wang, Teng; Bex, Pieter; Struyf, Herbert; Sleeckx, Erik; Demeurisse, Caroline; Attard, A.; Eberharter, W.; Klingler, H. (2015) -
3D-SoC integration utilizing high accuracy wafer level bonding
Peng, Lan; Kim, Soon-Wook; Heylen, Nancy; Reichardt, Maik; Kurz, Florian; Wagenleitner, Thomas; Sleeckx, Erik; Struyf, Herbert; Rebibis, Kenneth June; Miller, Andy; Beyer, Gerald; Beyne, Eric (2016) -
A conformal oxide liner for through silicon vias by pulsed SA-CVD deposition
Sleeckx, Erik; Schaekers, Marc; Durr, Emma (2009) -
A conformal oxide liner for through silicon vias by pulsed SA-CVD deposition
Sleeckx, Erik; Schaekers, Marc; Durr, Emma (2009) -
A low thermal budget pre metal dielectric stack using PECVD and HDP processing
Schaekers, Marc; De Jaeger, Brice; Sleeckx, Erik; Debusschere, Ingrid; Van Hove, Marleen; Lauwers, A.; Hauf, H. (2001) -
A unique temporary bond solution based on a thermoplastic material tacky at room temperature and highly thermally resistant application extension from 3D-SIC to FO-WLP
Phommahaxay, Alain; Nakamura, Atsushi; Potoms, Goedele; Bertheau, Julien; Bex, Pieter; Duval, Fabrice; Podpod, Arnita; Verbinnen, Greet; Kamochi, Yoshitaka; Sawano, Mitsuru; Beyer, Gerald; Sleeckx, Erik; Beyne, Eric (2017) -
Advanced dicing technologies for combination of wafer to wafer and collective die to wafer fusion bonding
Inoue, Fumihiro; Phommahaxay, Alain; Podpod, Arnita; Suhard, Samuel; Hoshino, Hitoshi; Berthold, Moeller; Sleeckx, Erik; Rebibis, Kenneth June; Miller, Andy; Beyne, Eric (2019) -
Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technology
Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; Inoue, Fumihiro; Phommahaxay, Alain; Sleeckx, Erik; De Vos, Joeri; Zinner, Dominik; Thomas, Wagenleitner; Thomas, Uhrmann; Markus, Wimplinger; Ben, Schoenaers; Andre, Stesmans; Afanasiev, Valeri; Miller, Andy; Beyer, Gerald; Beyne, Eric (2018) -
Advances in temporary carrier technology for high density fan-out device build-up
Podpod, Arnita; Phommahaxay, Alain; Bex, Pieter; Slabbekoorn, John; Bertheau, Julien; Salahouelhadj, Abdellah; Sleeckx, Erik; Miller, Andy; Beyer, Gerald; Beyne, Eric; Guerrero, Alice; Yess, Kim; Arnold, Kim (2019) -
Advances in thin wafer debonding and ultra thin 28nm FinFET substrate transfer
Phommahaxay, Alain; Guerrero, Alice; Jourdain, Anne; Potoms, Goedele; Verbinnen, Greet; Bai, Dongshun; Yess, Kim; Arnold, Kim; Sleeckx, Erik; Beyer, Gerald; Beyne, Eric (2017) -
Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Zhao, Chao; Pawlak, Malgorzata; Popovici, Mihaela Ioana; Schaekers, Marc; Sleeckx, Erik; Vancoille, Eric; Wouters, Dirk; Tokei, Zsolt; Kittl, Jorge (2009) -
Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Zhao, Chao; Pawlak, Malgorzata; Schaekers, Marc; Sleeckx, Erik; Vancoille, Eric; Wouters, Dirk; Tokei, Zsolt; Kittl, Jorge (2009) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Challenges and solutions on pre-assembly processes for thinned 3D wafers with micro-bumps on the backside
Podpod, Arnita; Demeurisse, Caroline; Rebibis, Kenneth June; Gerets, Carine; Phommahaxay, Alain; Capuz, Giovanni; Duval, Fabrice; Sleeckx, Erik; Struyf, Herbert; Miller, Andy; Beyne, Eric; Beyer, Gerald (2014) -
Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109
Das, Arabinda; Kokubo, Terukazu; Furukawa, Yukiko; Struyf, Herbert; Vos, Ingrid; Sijmus, Bram; Iacopi, Francesca; Van Aelst, Joke; Le, Quoc Toan; Carbonell, Laure; Brongersma, Sywert; Maenhoudt, Mireille; Tokei, Zsolt; Vervoort, Iwan; Sleeckx, Erik; Stucchi, Michele; Schaekers, Marc; Boullart, Werner; Rosseel, Erik; Van Hove, Marleen; Vanhaelemeersch, Serge; Shiota, A.; Maex, Karen (2002) -
Characterization and integration in Cu damascene structures of AURORA, an inorganic low-k dielectric
Alves Donaton, Ricardo; Coenegrachts, Bart; Sleeckx, Erik; Schaekers, Marc; Sophie, Guus; Matsuki, N.; Baklanov, Mikhaïl; Struyf, Herbert; Lepage, Muriel; Vanhaelemeersch, Serge; Beyer, Gerald; Stucchi, Michele; De Roest, David; Maex, Karen (2001) -
Characterization of extreme Si thinning proces for wafer-to-wafer stacking
Inoue, Fumihiro; Jourdain, Anne; De Vos, Joeri; Peng, Lan; Liebens, Maarten; Armini, Silvia; Uedono, Akira; Rebibis, Kenneth June; Miller, Andy; Beyne, Eric; Sleeckx, Erik (2016) -
Characterization of inorganic dielectric layers for low thermal budget wafer to wafer bonding
Inoue, Fumihiro; Peng, Lan; Phommahaxay, Alain; Kim, Soon-Wook; De Vos, Joeri; Sleeckx, Erik; Miller, Andy; Beyer, Gerald; Beyne, Eric (2017) -
Characterization of silicon carbon nitride for low temperature wafer-to-wafer direct bonding
Nagano, Fuya; Iacovo, Serena; Phommahaxay, Alain; Inoue, Fumihiro; Sleeckx, Erik; De Gendt, Stefan; Beyer, Gerald; Beyne, Eric (2020)