Browsing by Author "Everaert, Jean-Luc"
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Publication 1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Proceedings paper2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.592-595Publication 3D simulation for melt laser anneal integration in FinFET's contact
Publication 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
; ; Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Proceedings paper2010, IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Journal article2011, Electrochemical and Solid-State Letters, (14) 7, p.271-273Publication A snapshot review on metal-semiconductor contact exploration for 7-nm CMOS technology and beyond
Journal article review2022-11-21, MRS ADVANCES, (7) 36, p.1369-1379Publication Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199Publication Advanced phosphorus emitters for high efficiency Si solar cells
Proceedings paper2009, 24th European Photovoltaic Solar Energy Conference and Exhibition - EPVSEC, 21/09/2009, p.1843-1846Publication ALD as an enabler of self-aligned multiple patterning schemes
Proceedings paper2017, AVS 17th International Conference on Atomic Layer Deposition - ALD, 15/07/2017, p.142-142Publication Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices
Oral presentation2011, International Topical Workshop onSubsecond Thermal Processing of Advanced Materials - SubthermPublication Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation
Proceedings paper2008, 17th International Conference in Ion Implantation Technology - IIT, 8/06/2008, p.464-464Publication Bulk FinFET Fin height control using Gas Cluster Ion Beam (GCIB) - Location Specific Processing (LSP)
Proceedings paper2013, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 24/09/2013, p.706-707Publication Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.550-552Publication Conformal doping for FINFET's: a fabrication and metrology challenge
Oral presentation2008, Stanford & Tohoku University Joint Open Workshop on 3D Transistor and its ApplicationsPublication Conformal doping of FINFET's: a fabrication and metrology challenge
Meeting abstract2008, E-MRS Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication Conformal doping of FINFET's: a fabrication and metrology challenge
Proceedings paper2008, 17th International Conference in Ion Implantation Technology - IIT, 8/06/2008, p.449-456Publication Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
Journal article2010, Applied Physics Letters, (96) 12, p.122906Publication Control of laser induced interface traps with in-line corona charge metrology
Proceedings paper2008, 16th Annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.163-168Publication Crystallinity and composition of Sc1-x(-y)SixP(y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications
Journal article2024, JAPANESE JOURNAL OF APPLIED PHYSICS, (63) 2, p.Art. 02SP97Publication Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications
; ; ; Everaert, Jean-LucProceedings paper2007-09, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 10/09/2007, p.203-206