Browsing by Author "Green, Martin"

A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

Advanced surface preparation leading into the nano-era

ALD HfO2 surface preparation study

Characterization of high-k films grown by atomic layer deposition

Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces

Dielectric films for advanced microelectronics

Enhanced initial growth of atomic layer deposited metal oxides on hydrogen-terminated silicon

Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications

Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing

Initial growth kinetics of ALD Al2O3 and HfO2 and post-annealing effects

Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)

Physical characterisation of high-gate stacks

Physical characterization of ultrathin high k dielectrics

Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing

Scaling of high-k dielectrics towards sub-1nm EOT

The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration

Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits