Browsing by Author "Kaushik, Vidya"
- Results Per Page
- Sort Options
Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Charge characterisation in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode
Journal article2007-07, Applied Physics Letters, (91) 3, p.33502Publication Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching
Journal article2004, Journal of the Electrochemical Society, (151) 11, p.F269-F275Publication Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation
Journal article2007, IEEE Trans. Electron Devices, (54) 7, p.1771-1775Publication Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour
Proceedings paper2003, Extended Abstracts International Workshop on Gate Insulator - IWGI, 6/11/2003, p.62-63Publication Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric
Journal article2005, Journal of the Electrochemical Society, (152) 11, p.F185-F189Publication Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Oral presentation2002, Atomic Layer Deposition Conference - ALDPublication High-k dielectrics integration prospects
Proceedings paper2005, ULSI Process Integration IV, 15/05/2005, p.169-192Publication High-k gate stack engineering – towards meeting low standby power and high performance targets
; ;Brunco, David; ; ; Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.109-117Publication High-k metal gate MOSFETs: Impact of extrinsic process condition on the gate-stack quality. A mobility study
Journal article2007-03, IEEE Trans. Electron Devices, (54) 3, p.497-503Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 65 nm NMOS process flow
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.251-254Publication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?Publication Issues, achievements and challenges towards intergration of high-k dielectrics
Proceedings paper2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002Publication Observation and characterization of defects in HfO2 high-k gate dielectric layers
Journal article2005, Microelectronics Reliability, (45) 5_6, p.798-801Publication Observation and characterization of defects in HfO2 High-K gate dielectric layers
Proceedings paper2004, 13th Workshop on Dielectrics in Microelectronics - WODIM, 28/06/2004Publication On the nature of weak spots in high-k layers submitted to anneals
Proceedings paper2004, Integration of Advanced Micro- and Nanoelectronic Devices. Critical Issues and Solutions, 12/04/2004, p.203-208Publication Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey
Journal article2005-01, Microelectronics Reliability, (45) 5_6, p.786-789Publication Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey
Proceedings paper2004, 13th Workshop on Dielectrics in Microelectronics - WODIM, 28/06/2004