Browsing by Author "Reed, Robert A."
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Publication 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
;Reaz, Mahmud ;Tonigan, Andrew M. ;Li, Kan ;Smith, M. Brandon ;Rony, Mohammed W.Gorchichko, MariiaJournal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 5, p.2556-2563Publication Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
;Cao, Jingchen ;Wynocker, Isabella ;Zhang, En Xia ;Reed, Robert A.Alles, Michael L.Journal article2023-04-18, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (70) 4, p.634-640Publication Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions
Proceedings paper2011, European Conference on Radiation Effects on Component and Systems - RADECS, 19/09/2011, p.195-201Publication Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
;Li, Kan ;Zhang, En Xia ;Gorchichko, Mariia ;Wang, Peng Fei ;Reaz, MahmudZhao, Simeng E.Journal article2021, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (68) 5, p.740-747Publication Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
Journal article2023, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (70) 4, p.442-448Publication Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
;Luo, Xuyi ;Zhang, En Xia ;Wang, Peng Fei ;Li, Kan; ; Reed, Robert A.Journal article2023, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (23) 1, p.153-161Publication Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Journal article2022, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (69) 3, p.299-306Publication Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide
Journal article2024, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (71) 8, p.1789-1797Publication Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
;Ryder, Landen D. ;Ryder, Kaitlyn L. ;Sternberg, Andrew L. ;Kozub, John A.Zhang, En XiaJournal article2021, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (68) 5, p.801-806Publication Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
;Rony, M. W. ;Samsel, Isaak K. ;Zhang, En Xia ;Sternberg, Andrew ;Li, KanReaz, MahmudJournal article2021, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (68) 5, p.807-814Publication TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
;Bonaldo, Stefano ;Gorchichko, Mariia ;Zhang, En Xia ;Ma, Teng ;Mattiazzo, SerenaBagatin, MartaJournal article2022, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (69) 7, p.1444-1452Publication Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors
;Guo, Zixiang ;Li, Kan ;Li, Xun ;Luo, Xuyi ;Zhang, En Xia ;Reed, Robert A.Schrimpf, Ronald D.Journal article2023, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (70) 8, p.2002-2007Publication Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers
Journal article2024, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (71) 4, p.461-468Publication Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Journal article2020, IEEE Transactions on Nuclear Science, (67) 7, p.1312-1319Publication Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack
Proceedings paper2019, Radiation Effects on Devices & ICs 2019 - RADECS, 16/09/2019Publication Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Journal article2020-01, IEEE Transactions on Nuclear Science, (67) 1, p.253-259Publication Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
;Cao, Jingchen ;Wang, Peng Fei ;Li, Xun ;Guo, Zixiang ;Zhang, En Xia ;Reed, Robert A.Alles, Michael L.Journal article2022, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (69) 3, p.314-320Publication Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
;Gorchichko, Mariia ;Zhang, En Xia ;Wang, Pan ;Bonaldo, StefanoSchrimpf, Ronald D.Journal article2021, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (68) 5, p.687-696