Browsing by Author "Zhang, En Xia"

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors

Comparison of charge pumping and 1/f noise in irradiated Ge pMOSFETs

Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs

Effects of processing and radiation bias on leakage currents in Ge pMOSFETs

Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si

Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Single-event induced charge collection in Ge-channel pMos FinFETs

Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors