Browsing by author "Kaushik, Vidya"

Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

Shickova, Adelina; Kauerauf, Thomas; Rothschild, Aude; Aoulaiche, Marc; Sahhaf, Sahar; Kaczer, Ben; Veloso, Anabela; Torregiani, Cristina; Pantisano, Luigi; Lauwers, Anne; Zahid, Mohammed; Rost, Tim; Tigelaar, H.; Pas, M.; Fretwell, J.; McCormack, J.; Hoffmann, Thomas; Kerner, Christoph; Chiarella, Thomas; Brus, Stephan; Harada, Yoshinao; Niwa, Masaaki; Kaushik, Vidya; Maes, Herman; Absil, Philippe; Groeseneken, Guido; Biesemans, Serge; Kittl, Jorge (2007)

Charge characterisation in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode

O'Sullivan, Barry; Pourtois, Geoffrey; Kaushik, Vidya; Schram, Tom; Kittl, Jorge; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2007-07)

Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching

Claes, Martine; De Gendt, Stefan; Witters, Thomas; Kaushik, Vidya; Conard, Thierry; Zhao, Chao; Manabe, Y.; Delabie, Annelies; Röhr, Erika; Chen, Jerry; Tsai, Wilman; Heyns, Marc (2004)

Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation

O'Sullivan, Barry; Kaushik, Vidya; Everaert, Jean-Luc; Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Rohr, Erika; De Gendt, Stefan; Heyns, Marc (2007)

Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour

Kaushik, Vidya; Röhr, Erika; De Gendt, Stefan; Delabie, Annelies; Van Elshocht, Sven; Claes, Martine; Shimamoto, Yasuhiro; Ragnarsson, Lars-Ake; Witters, Thomas; Manabe, Y.; Heyns, Marc (2003)

Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric

Van Elshocht, Sven; Weber, U.; Conard, Thierry; Kaushik, Vidya; Houssa, Michel; Hyun, Sangjin; Seitzinger, Bernard; Lehnen, Peer; Schuhmacher, M.; Lindner, J.; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2005)

Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications

Caymax, Matty; Brijs, Bert; Carter, Richard; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Maes, Jan; Chen, Jerry; Cosnier, Vincent; Green, Martin; Kaushik, Vidya; Kluth, Jon; Tsai, Wilman (2002)

High-k dielectrics integration prospects

Kubicek, Stefan; Van Elshocht, Sven; Delabie, Annelies; Yamamoto, Kazuhiko; Beckx, Stephan; Claes, Martine; Van Hoornick, Nausikaa; Kwak, Dong Hwa; Hyun, Sangjin; Rothschild, Aude; Veloso, Anabela; Kottantharayil, Anil; Lujan, Guilherme; Kittl, Jorge; Lauwers, Anne; Kaushik, Vidya; Niwa, Masaaki; De Gendt, Stefan; Heyns, Marc; Jurczak, Gosia; Biesemans, Serge (2005)

High-k gate stack engineering – towards meeting low standby power and high performance targets

De Gendt, Stefan; Brunco, David; Caymax, Matty; Conard, Thierry; Date, Lucien; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Hyun, Sangjin; Kaushik, Vidya; Kubicek, Stefan; Maes, Jan; Pantisano, Luigi; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Sleeckx, Erik; Vandervorst, Wilfried; Van Elshocht, Sven; Yamada, Naoki; Witters, Thomas; Zhao, Chao; Zimmerman, Paul; Heyns, Marc (2005)

High-k metal gate MOSFETs: Impact of extrinsic process condition on the gate-stack quality. A mobility study

Trojman, Lionel; Ragnarsson, Lars-Ake; O'Sullivan, Barry; Rosmeulen, Maarten; Kaushik, Vidya; Groeseneken, Guido; Maes, Herman; De Gendt, Stefan; Heyns, Marc (2007-03)

Implementation of high-k gate dielectrics - a status update

De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003)

Investigation of poly-Si/HfO2 gate stacks in a self-aligned 65 nm NMOS process flow

Kubicek, Stefan; Carter, Richard; Cartier, Eduard; Lujan, Guilherme; Kerber, Andreas; Kaushik, Vidya; Chen, P.J.; De Gendt, Stefan; Heyns, Marc (2002)

Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow

Kubicek, Stefan; Chen, Jerry; Ragnarsson, Lars-Ake; Carter, Richard; Kaushik, Vidya; Lujan, Guilherme; Cartier, Eduard; Henson, Kirklen; Pantisano, Luigi; Beckx, Stephan; Jaenen, Patrick; Boullart, Werner; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2003)

Issues, achievements and challenges towards integration of high-k dielectrics

Caymax, Matty; De Gendt, Stefan; Vandervorst, Wilfried; Heyns, Marc; Bender, Hugo; Carter, Richard; Conard, Thierry; Degraeve, Robin; Groeseneken, Guido; Kubicek, Stefan; Lujan, Guilherme; Pantisano, Luigi; Petry, Jasmine; Röhr, Erika; Van Elshocht, Sven; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, S.; Tsai, Wilman; Young, Edward; Manabe, Y. (2002)

Issues, achievements and challenges towards intergration of high-k dielectrics

Heyns, Marc; Bender, Hugo; Caymax, Matty; Carter, R; Claes, Martine; Conard, Thierry; Boullart, Werner; De Gendt, Stefan; Degraeve, Robin; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Kubicek, Stefan; Lujan, Guilherme; Nohira, H.; Pantisano, Luigi; Petry, Jasmine; Röhr, Erika; Vandervorst, Wilfried; Van Elshocht, Sven; Xu, Zhen; Zhao, Chao; Cartier, E.; Chen, J.; Cosnier, V.; Green, M.; Jang, S.E.; Kaushik, Vidya; Kerber, A.; Kluth, J.; Lin, S.; Tsai, Wilman; Young, Edward; Manabe, Y. (2002)