Browsing by author "Cockburn, Andrew"
Now showing items 1-20 of 29
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A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li-Qun; Le, Maggie; Lee, Won (2010) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
Garbin, Daniele; Devulder, Wouter; Degraeve, Robin; Donadio, Gabriele Luca; Clima, Sergiu; Opsomer, Karl; Fantini, Andrea; Cellier, Daniel; Kim, Wan Gee; Pakala, Mahendra; Cockburn, Andrew; Detavernier, Christophe; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Cu wire resistance improvement using Mn-based self-formed barriers
Siew, Yong Kong; Jourdan, Nicolas; Ciofi, Ivan; Croes, Kristof; Wilson, Chris; Tang, Baojun; Demuynck, Steven; Ai, Huang; Cellier, Daniel; Cockburn, Andrew; Boemmels, Juergen; Tokei, Zsolt (2014) -
CVD Mn-based self-formed barrier for advanced interconnect technology
Siew, Yong Kong; Jourdan, Nicolas; Barbarin, Yohan; Machillot, Jerome; Demuynck, Steven; Croes, Kristof; Tseng, J.; Ai, Hua; Tang, Jing; Naik, M.; Wang, P.; Narasimhan, M.; Abraham, M.; Cockburn, Andrew; Boemmels, Juergen; Tokei, Zsolt (2013) -
CVD-Mn(Nx) as copper diffusion barrier for advanced interconnect technologies
Jourdan, Nicolas; Machillot, Jerome; Barbarin, Yohan; Siew, Yong Kong; Ai, Hua; Cockburn, Andrew; Nguyen, Mai Phuong; Van Elshocht, Sven; Boemmels, Juergen; Lakshmanan, A.; Ma, Paul; Narasimhan, Murali; Tokei, Zsolt (2013) -
Damage reduction and sealing of low-k films by combined He and NH3 plasma treatment
Urbanowicz, Adam; Baklanov, Mikhaïl; Heijlen, Jeroen; Travaly, Youssef; Cockburn, Andrew (2007) -
Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12) -
Impact of barrier integrity on liner reliability in 3D through silicon vias
Li, Yunlong; Civale, Yann; Oba, Yoshiyuki; Cockburn, Andrew; Park, Jin Hee; Beyne, Eric; De Wolf, Ingrid; Croes, Kristof (2013) -
Impact of LER on BEOL dielectric reliability: a quantitative model and experimental validation
Tokei, Zsolt; Roussel, Philippe; Stucchi, Michele; Versluijs, Janko; Ciofi, Ivan; Carbonell, Laure; Beyer, Gerald; Cockburn, Andrew; Augustin, M.; Shah, Kavita (2009) -
Implementation of Ru based barriers in 50 nm half pitch single damascene Cu/SiCOH (k=2.5) structures
Carbonell, Laure; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Tokei, Zsolt; Hendrickx, Dirk; Struyf, Herbert; Claes, Martine; Versluijs, Janko; Van Besien, Els; Caluwaerts, Rudy; Cockburn, Andrew; Gravey, Virginie; Shah, Kavita; Al-Bayati, Amir; Fu, X.; Lubben, D.; Sundarrajan, A.; Beyer, Gerald (2009) -
Implementation of Ru based barriers in 50 nm half pitch single damascene Cu/SiCOH (k=2.5) structures
Carbonell, Laure; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Tokei, Zsolt; Hendrickx, Dirk; Struyf, Herbert; Vandervorst, Alain; Claes, Martine; Lux, Marcel; Versluijs, Janko; Alaerts, Wilfried; Van Besien, Els; Deweerdt, Bruno; Vaes, Jan; Caluwaerts, Rudy; Cockburn, Andrew; Gravey, Virginie; Shah, Kavita; Al-Bayati, A.; Fu, X.; Lubben, D.; Sundarrajan, A.; Beyer, Gerald (2008) -
Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM)
Siew, Yong Kong; Versluijs, Janko; Kunnen, Eddy; Ciofi, Ivan; Alaerts, Wilfried; Dekkers, Harold; Volders, Henny; Suhard, Samuel; Cockburn, Andrew; Sleeckx, Erik; Van Besien, Els; Struyf, Herbert; Maenhoudt, Mireille; Noori, Atif; Padhi, Deenesh; Shah, Kavita; Gravey, Virginie; Beyer, Gerald (2010) -
Integration of 50 nm half pitch single damascene copper trenches in BDII by means of double patterning 193 nm immersion lithography on metal hardmask
Van Olmen, Jan; Al-Bayati, A; Beyer, Gerald; Boelen, Pieter; Carbonell, Laure; Zhao, Chao; Ciofi, Ivan; Claes, Martine; Cockburn, Andrew; Druais, Gael; Hendrickx, Dirk; Heylen, Nancy; Kesters, Els; Lytle, S.; Noori, A.; Op de Beeck, Maaike; Struyf, Herbert; Tokei, Zsolt; Versluijs, Janko (2007) -
Manufacturable processes for =32-nm-node CMOS enhancement by synchronous optimization of strain-engineered channel and external parasitic resistances
Noori, Atif; Balseanu, Mihaela; Boelen, Pieter; Cockburn, Andrew; Demuynck, Steven; Felch, Susan; Gandikota, Srinivas; Gelatos, jerry; Khandelwal, Amit; Kittl, Jorge; Lauwers, Anne; Lee, Wen-Chin; Lei, Jianxin; Mandrekar, Tushar; Schreutelkamp, Rob; Shah, Kavita; Thompson, Scott; Verheyen, Peter; Wang, Ching-Ya; Xia, Li-Qun; Arghavani, Reza (2008) -
Metallization of sub- 30 nm Interconnects: Comparison of different liner/seed combinations
Carbonell, Laure; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Caluwaerts, Rudy; Devriendt, Katia; Altamirano Sanchez, Efrain; Wouters, Johan M. D.; Gravey, Virginie; Shah, Kavita; Luo, Qian; Sundarrajan, Arvind; Lu, Jiang; Aubuchon, Joseph; Ma, Paul; Narasimhan, Murali; Cockburn, Andrew; Tokei, Zsolt; Beyer, Gerald (2009) -
Metallization options for sub- 30 nm interconnects: comparison of Cu and W metallizations
Carbonell, Laure; Caluwaerts, Rudy; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Mertens, Sofie; Van Ammel, Annemie; Van Roey, Frieda; Cockburn, Andrew; Gravey, Virgine; Shah, Kavita; Rajagopalan, Ravi; Tokei, Zsolt; Beyer, Gerald (2010) -
Metrology for monitoring and detecting process issues in a TSV module
Philipsen, Harold; Vandersmissen, Kevin; Cockburn, Andrew; Erickson, David; Drijbooms, Chris; Moussa, Alain; Bender, Hugo; Struyf, Herbert (2014)