Browsing by author "Van Dal, Mark"
Now showing items 1-20 of 56
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1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack
Torregiani, Cristina; Liu, Joy; Vandevelde, Bart; Degryse, Dominiek; Van Dal, Mark; Benedetti, Alessandro; Lauwers, Anne; Maex, Karen (2004) -
A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Lujan, Guilherme; Magnus, Wim; Soree, Bart; Pourghaderi, Mohammad Ali; Veloso, Anabela; Van Dal, Mark; Lauwers, Anne; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2005) -
Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
Veloso, Anabela; Collaert, Nadine; De Keersgieter, An; Witters, Liesbeth; Rooyackers, Rita; Van Dal, Mark; Duffy, Ray; Pawlak, Bartek; Lander, Rob; Hoffmann, Thomas Y. (2009) -
Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Surdeanu, Radu; Pawlak, Bartek; Lindsay, Richard; Van Dal, Mark; Doornbos, Gerben; Dachs, C.J.J.; Ponomarev, Youri; Loo, Josine; Cubaynes, Florence; Henson, Kirklen; Verheijen, M.A.; Kaiser, M.; Pagès, Xavier; Stolk, Peter; Jurczak, Gosia (2004) -
Application of HCl etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger; Caymax, Matty (2008) -
Application of HCl gas phase etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Leys, Frederik; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger (2008-05) -
Applications of Ni-based silicides to 45 nm CMOS and beyond
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Pawlak, Malgorzata; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Kottantharayil, Anil; Pourtois, Geoffrey; Lindsay, Richard; Maex, Karen (2004) -
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Pelaz, L.; Duffy, Ray; Aboy, M.; Marques, L.; Lopez, P.; Santos, I.; Pawlak, Bartek; Van Dal, Mark; Duriez, Blandine; Merelle, Thomas; Doornbos, Gerben; Collaert, Nadine; Witters, Liesbeth; Rooyackers, Rita; Vandervorst, Wilfried; Jurczak, Gosia; Kaiser, M.; Weemaes, R.; Van Berkum, J.; Breimer, P.; Lander, Rob (2008) -
Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Veloso, Anabela; Van Dal, Mark; Collaert, Nadine; De Keersgieter, An; Witters, Liesbeth; Rooyackers, Rita; Redolfi, Augusto; Brus, Stephan; Duffy, Ray; Pawlak, Bartek; Vellianitis, Georgios; Duriez, Blandine; Merelle, Thomas; Absil, Philippe; Biesemans, Serge; Jurczak, Gosia; Hoffmann, Thomas Y.; Lander, Rob (2009-10) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Dachs, Charles; Surdeanu, Radu; Pawlak, Bartek; Doornbos, Gerben; Duffy, R.; Heringa, Anco; Ponomarev, Youri; Venezia, Vincent; Van Dal, Mark; Stolk, P.; Lindsay, Richard; Henson, Kirklen; Dieu, B.; Geenen, Luc; Hoflijk, Ilse; Richard, Olivier; Clarysse, Trudo; Brijs, Bert; Vandervorst, Wilfried; Pagès, Xavier (2003) -
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Kottantharayil, Anil; Verheyen, Peter; Collaert, Nadine; Dixit, Abhisek; Kaczer, Ben; Snow, Jim; Vos, Rita; Locorotondo, Sabrina; Degroote, Bart; Shi, Xiaoping; Rooyackers, Rita; Mannaert, Geert; Brus, Stephan; Yim, Yong Sik; Lauwers, Anne; Goodwin, Michael; Kittl, Jorge; Van Dal, Mark; Richard, Olivier; Veloso, Anabela; Kubicek, Stefan; Beckx, Stephan; Boullart, Werner; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Akheyar, Amal; Lauwers, Anne; Kittl, Jorge; de Potter de ten Broeck, Muriel; Chamirian, Oxana; Jonckheere, Rik; Leunissen, Peter; Van Dal, Mark; Lindsay, Richard; Tempel, Georg; Maex, Karen (2003) -
Conformal doping for FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Everaert, Jean-Luc; Rosseel, Erik; Jurczak, Gosia; Hoffmann, Thomas Y.; Eyben, Pierre; Mody, Jay; Koelling, Sebastian; Gilbert, Matthieu; Pawlak, Bartek; Duffy, R.; Van Dal, Mark (2008) -
Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Yu, HongYu; Singanamalla, Raghunath; Opsomer, Karl; Augendre, Emmanuel; Simoen, Eddy; Kittl, Jorge; Kubicek, Stefan; Severi, Simone; Shi, Xiaoping; Brus, Stephan; Zhao, Chao; de Marneffe, Jean-Francois; Locorotondo, Sabrina; Shamiryan, Denis; Van Dal, Mark; Veloso, Anabela; Lauwers, Anne; Niwa, Masaaki; Maex, Karen; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Effects of alloying on properties of NiSi for CMOS applications
Van Dal, Mark; Akheyar, Amal; Kittl, Jorge; Chamirian, Oxana; de Potter de ten Broeck, Muriel; Demeurisse, Caroline; Lauwers, Anne; Maex, Karen (2004) -
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Serra, N.; Conzatti, F.; Esseni, D.; De Michielis, M.; Palestri, P.; Selmi, L.; Thomas, S.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Witters, Liesbeth; Hikavyy, Andriy; Hytch, M. J.; Houdellier, F.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Vellianitis, Georgios; Van Dal, Mark; Duriez, Blandine; Doornbos, Gerben; Lander, Rob (2009) -
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Mody, Jay; Duffy, Ray; Eyben, Pierre; Goossens, Jozefien; Moussa, Alain; Polspoel, Wouter; Berghmans, Bart; Van Dal, Mark; Pawlak, Bartek; Kaiser, Monja; Weemaes, R. G. R.; Vandervorst, Wilfried (2010) -
Experimental studies of dose retention and activation in FinFet-based structures
Mody, Jay; Duffy, Ray; Eyben, Pierre; Goossens, Jozefien; Moussa, Alain; Polspoel, Wouter; Berghmans, Bart; Van Dal, Mark; Pawlak, Bartek; Kaiser, Monja; Weemaes, Robbert; Vandervorst, Wilfried (2009)