Browsing by author "Ragnarsson, Lars-Ake"
Now showing items 21-40 of 238
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Analog performance and its variability in sub-10 nm fin-width FinFETs: a detailed analysis
Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars-Ake; Mitard, Jerome; Terzieva, Valentina; Horiguchi, Naoto; Mohapatra, Nihar R. (2019) -
Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Groeseneken, Guido (2008) -
Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Yu, HongYu; Groeseneken, Guido (2008) -
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, A-M; Jech, M.; Waldhoer, D.; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, V.; Stesmans, A.; Horiguchi, Naoto; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2020) -
Atomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics
Adelmann, Christoph; Ragnarsson, Lars-Ake; Moussa, Alain; Woicik, Joseph; Mueller, Stefan; Schoeder, Uwe; Afanasiev, Valeri; Van Elshocht, Sven (2012) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium silicate gate dielectric layers
Delabie, Annelies; Pourtois, Geoffrey; Caymax, Matty; De Gendt, Stefan; Ragnarsson, Lars-Ake; Heyns, Marc; Fedorenko, Yanina; Swerts, Johan; Maes, Jan (2007) -
Atomic layer deposition of HfO2 on (100) and (110) oriented silicon surfaces
Nyns, Laura; Ragnarsson, Lars-Ake; Hall, Lindsey; Delabie, Annelies; Heyns, Marc; Van Elshocht, Sven; Vinckier, Chris; Zimmerman, Paul; De Gendt, Stefan (2007) -
AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
Karim, Zia; Barbar, Ghassan; Boissiere, Olivier; Lehnen, Peer; Lohe, Christoph; Seidel, Tom; Adelmann, Christoph; Conard, Thierry; O'Sullivan, Barry; Ragnarsson, Lars-Ake; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2007-10) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Lujan, Guilherme; Magnus, Wim; Soree, Bart; Ragnarsson, Lars-Ake; Trojman, Lionel; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2005-06) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions
Groeseneken, Guido; Aoulaiche, Marc; Cho, Moon Ju; Franco, Jacopo; Kaczer, Ben; Kauerauf, Thomas; Mitard, Jerome; Ragnarsson, Lars-Ake; Roussel, Philippe; Toledano Luque, Maria (2013) -
BTI reliability improvement strategies in low thermal budget gate dtacks for 3D sequential integration
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Vandooren, Anne; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Hellings, Geert; Brus, Stephan; Cott, Daire; De Heyn, Vincent; Groeseneken, Guido; Horiguchi, Naoto; Ryckaert, Julien; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2018-12) -
BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
Franco, Jacopo; Graziano, Salvatore; Kaczer, Ben; Crupi, Felice; Ragnarsson, Lars-Ake; Grasser, Tibor; Groeseneken, Guido (2012) -
Challenges and progresses in high-k metal gate for Silicon-based advanced CMOS transistor architecture
Horiguchi, Naoto; Ragnarsson, Lars-Ake; Mertens, Hans; Arimura, Hiroaki; Ritzenthaler, Romain; Franco, Jacopo; Schram, Tom; Dekkers, Harold; Barla, Kathy; Mocuta, Dan (2017) -
Challenges and solutions of replacement metal gate patterning to enable gate-all-around device scaling
Oniki, Yusuke; Ragnarsson, Lars-Ake; Hideaki, Iino; Cott, Daire; Chan, BT; Sebaai, Farid; Hopf, Toby; Dekkers, Harold; Dentoni Litta, Eugenio; Altamirano Sanchez, Efrain; Holsteyns, Frank; Horiguchi, Naoto (2021) -
Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup
Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018) -
Challenges in integration of metal gate high-k dielectrics gate stacks
Tsai, W.; Ragnarsson, Lars-Ake; Schram, Tom; De Gendt, Stefan; Heyns, Marc (2004)