Browsing Conference contributions by imec author "96aaa64e938e223bc994751727550abb316e187c"
Now showing items 1-20 of 60
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Menou, Nicolas; Wang, Xin Peng; Kaczer, Ben; Polspoel, Wouter; Popovici, Mihaela Ioana; Opsomer, Karl; Pawlak, Malgorzata; Knaepen, W.; Detavernier, C.; Blomberg, T.; Pierreux, D.; Swerts, Johan; Maes, Jan; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2008) -
A new HF vapor native oxide removal process for cluster applications
Sprey, Hessel; Storm, Arjen; Maes, Jan; Granneman, E. H. A.; Hendriks, Marton; Röhr, Erika; Caymax, Matty; Decoutere, Stefaan; Heyns, Marc (1998) -
A new HF vapor process for native oxide removal, suited for cluster applications
Storm, Arjen; Sprey, Hessel; Maes, Jan; Granneman, E.; De Blank, Rene; Röhr, Erika; Caymax, Matty; Heyns, Marc (1999) -
Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Profijt, Harald; Rosseel, Erik; Tolle, John; Weeks, K.D.; Loo, Roger; Mehta, Sandeep; Maes, Jan (2014-11) -
ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004) -
ALD HfO2 surface preparation study
Delabie, Annelies; Caymax, Matty; Maes, Jan; Bajolet, Philippe; Brijs, Bert; Cartier, Eduard; Conard, Thierry; De Gendt, Stefan; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Green, Martin; Tsai, Wilman; Heyns, Marc (2003) -
ALD La-based oxides for Vt-tuning in high-k/metal gate stacks
Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Tois, E.; Delabie, Annelies; Ragnarsson, Lars-Ake; Yu, HongYu; Nyns, Laura; Adelmann, Christoph; Van Elshocht, Sven (2007) -
ALD La2O3 cap layers on high-k gates to modify the metal gate work function
Maes, Jan; Swerts, Johan; Tois, E.; Delabie, Annelies; Adelmann, Christoph; Ragnarsson, Lars-Ake; Yu, HongYu (2007) -
Application of x-ray fluorescence spectrometry in charaterization of high-k uktra-thin films
Zhao, Chao; Brijs, Bert; Dortu, Fabian; De Gendt, Stefan; Caymax, Matty; Heyns, Marc; Besling, W.; Maes, Jan (2003) -
Atomic layer deposition and remote plasma surface preparation for gate stack applications
Delabie, Annelies; Caymax, Matty; Brijs, Bert; Cartier, E.; Geenen, Luc; Vandervorst, Wilfried; Bajolet, Philippe; Maes, Jan; Tsai, Wilman; De Gendt, Stefan; Heyns, Marc (2003) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
Atomic layer deposition: an enabling technology for microelectronic device manufacturing
Lee, F.; Marcus, S.; Shero, E.; Wilk, G.; Swerts, Johan; Maes, Jan; Blomberg, T.; Delabie, Annelies; Gros-Jean, M.; Deloffre, E. (2007) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of nano-laminate structure using grazing incidence XRD and ATR-FTIR
Zhao, Chao; De Gendt, Stefan; Caymax, Matty; Heyns, Marc; Cosnier, Vincent; Maes, Jan; Roebben, G.; Van der Biest, O. (2003) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
Carter, Richard; Tsai, Wilman; Young, Edward; Maes, Jan; Chen, P.J.; Delabie, Annelies; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2003) -
Engineering the IIIV gate stack properties by optimization of the ALD process
Sioncke, Sonja; Ivanov, Tsvetan; Lin, Dennis; Franco, Jacopo; Vais, Abhitosh; Ameen, Mahmoud; Delabie, Annelies; Xie, Qi; Maes, Jan; Givens, Michael; Tang, Fu; Van Elshocht, Sven; Holsteyns, Frank; Barla, Kathy; Collaert, Nadine; Thean, Aaron; De Gendt, Stefan; Heyns, Marc (2014) -
Evaluation of Nb(Si)N as metal gate material
Van Hoornick, Nausikaa; De Witte, Hilde; Witters, Thomas; Zhao, Chao; Conard, Thierry; Huatori, H.; Swerts, Johan; Schram, Tom; Maes, Jan; De Gendt, Stefan; Heyns, Marc (2005)