Browsing Articles by imec author "e37bf3bce0b59e496a6f99ac0c4313dfb9c28564"
Now showing items 1-20 of 56
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1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Lee, Jae Woo; Cho, Moon Ju; Simoen, Eddy; Ritzenthaler, Romain; Togo, Mitsuhiro; Boccardi, Guillaume; Mitard, Jerome; Ragnarsson, Lars-Ake; Chiarella, Thomas; Veloso, Anabela; Horiguchi, Naoto; Thean, Aaron; Groeseneken, Guido (2013-03) -
Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Ragnarsson, Lars-Ake; Chang, Vincent; Yu, HongYu; Cho, Hag-Ju; Conard, Thierry; Yin, KaiMin; Delabie, Annelies; Swerts, Johan; Schram, Tom; De Gendt, Stefan; Biesemans, Serge (2007-06) -
Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
Cho, Moon Ju; Aoulaiche, Marc; Degraeve, Robin; Kaczer, Ben; Kauerauf, Thomas; Ragnarsson, Lars-Ake; Adelmann, Christoph; Van Elshocht, Sven; Hoffmann, Thomas Y.; Groeseneken, Guido (2011) -
Analog performance and its variability in sub-10 nm fin-width FinFETs: a detailed analysis
Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars-Ake; Mitard, Jerome; Terzieva, Valentina; Horiguchi, Naoto; Mohapatra, Nihar R. (2019) -
Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Groeseneken, Guido (2008) -
Atomic layer deposition of hafnium silicate gate dielectric layers
Delabie, Annelies; Pourtois, Geoffrey; Caymax, Matty; De Gendt, Stefan; Ragnarsson, Lars-Ake; Heyns, Marc; Fedorenko, Yanina; Swerts, Johan; Maes, Jan (2007) -
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Lujan, Guilherme; Magnus, Wim; Soree, Bart; Ragnarsson, Lars-Ake; Trojman, Lionel; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2005-06) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
Franco, Jacopo; Graziano, Salvatore; Kaczer, Ben; Crupi, Felice; Ragnarsson, Lars-Ake; Grasser, Tibor; Groeseneken, Guido (2012) -
Characterization of TaCl5-based ALD TaN films in metal gate stacks
Dekkers, Harold; Ragnarsson, Lars-Ake; Schram, Tom; Horiguchi, Naoto (2018) -
Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics
Xiang, Yang; Garcia Bardon, Marie; Kaczer, Ben; Alam, Md Nur Kutubul; Ragnarsson, Lars-Ake; Kaczmarek, Kuba; Parvais, Bertrand; Groeseneken, Guido; Van Houdt, Jan (2021) -
Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Yu, HongYu; Singanamalla, Raghunath; Ragnarsson, Lars-Ake; Chang, Vincent; Cho, Hag-Ju; Mitsuhashi, Riichirou; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Chang, Shou-Zen; Yin, K.M.; Schram, Tom; Kubicek, Stefan; De Gendt, Stefan; Absil, Philippe; De Meyer, Kristin; Biesemans, Serge (2007) -
Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress
Toledano Luque, Maria; Kaczer, Ben; Roussel, Philippe; Franco, Jacopo; Ragnarsson, Lars-Ake; Grasser, Tibor; Groeseneken, Guido (2011) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Effect of degas before metal gate deposition on the threshold voltage
Petry, Jasmine; Xiong, K.; Ragnarsson, Lars-Ake; Singanamalla, Raghunath; Hooker, Jacob (2007) -
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Lujan, Guilherme; Houssa, Michel; Schram, Tom; Schaekers, Marc; Van Ammel, Annemie; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2005-06) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation
O'Sullivan, Barry; Kaushik, Vidya; Everaert, Jean-Luc; Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Rohr, Erika; De Gendt, Stefan; Heyns, Marc (2007) -
Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Chang, Vincent; Ragnarsson, Lars-Ake; Yu, HongYu; Aoulaiche, Marc; Conard, Thierry; Yin, KaiMin; Schram, Tom; Maes, Jan Willem; De Gendt, Stefan; Biesemans, Serge (2007) -
Fast ramped voltage characterization of single trap bias and temperature impact on time-dependent VTH variability
Toledano Luque, Maria; Degraeve, Robin; Roussel, Philippe; Ragnarsson, Lars-Ake; Chiarella, Thomas; Horiguchi, Naoto; Mocuta, Anda; Thean, Aaron (2014-09)