Browsing by Author "Aymerich, X."

Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits

An equivalent circuit model for the recovery component of BTI

Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM

C-AFM Characterization of the dependance of AlHfOx electrical behaviour on post deposition annealing temperature

Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

Channel hot-carrier degradation under static stress in short channel transistors with high-k/metal gate stacks

Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

CHC degradation of strained devices based on SiON and high-k gate dielectric materials

Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators

Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents

Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale

Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM

Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

Probabilistic defect occupancy model for NBTI

Processing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors

Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors