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Browsing by Author "Meneghesso, G."

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    A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

    Meneghini, M.
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    Bertin, M.
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    Dal Santo, G.
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    Stocco, A.
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    Chini, A.
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    Marcon, Denis  
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    Malinowski, Pawel  
    Proceedings paper
    2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.13.3
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    A statistical approach to microdose induced degradation in FinFET devices

    Griffoni, Alessio
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    Gerardin, S.
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    Roussel, Philippe  
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    Degraeve, Robin  
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    Meneghesso, G.
    Journal article
    2009, IEEE Transactions on Nuclear Science, (56) 6_1, p.3285-3292
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    Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation

    Marino, F.A.
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    Bisi, D.
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    Meneghini, M.
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    Verzellesi, G.
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    Zanoni, E.
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    Van Hove, Marleen
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    You, Shuzhen  
    Journal article
    2015, Solid-State Electronics, 113, p.9-14
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    Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

    Modolo, N.
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    Fregolent, M.
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    Masin, F.
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    Benato, A.
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    Bettini, A.
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    Buffolo, M.
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    De Santi, C.
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    Borga, Matteo  
    Journal article
    2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 120560B
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    Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

    Modolo, N.
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    De Santi, C.
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    Baratella, Giulio  
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    Bettini, A.
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    Borga, Matteo  
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    Posthuma, Niels  
    Journal article
    2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4432-4437
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    Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

    Tajalli, A.
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    Stockman, Arno  
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    Meneghini, M.
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    Mouhoubi, S.
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    Banerjee, A.
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    Gerardin, S.
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    Bagatin, M.
    Proceedings paper
    2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95
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    Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

    Griffoni, A.
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    Tazzoli, A.
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    Gerardin, S.
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    Simoen, Eddy  
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    Claeys, Cor
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    Meneghesso, G.
    Proceedings paper
    2008, 30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 7/09/2008, p.59-66
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    ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques

    Griffoni, A.
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    Tazzoli, A.
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    Gerardin, S.
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    Simoen, Eddy  
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    Claeys, Cor
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    Meneghesso, G.
    Oral presentation
    2008, 2nd International Electrostatic Discharge Workshop
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    ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

    Canato, E
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    Meneghini, M.
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    Nardo, A.
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    Masin, F.
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    Barbato, F.
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    Barbato, M.
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    Stockman, Arno  
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    Banerjee, A.
    Journal article
    2019, Microelectronics Reliability, 100, p.113334
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    High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

    Favero, D.
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    Cavaliere, A.
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    De Santi, C.
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    Borga, Matteo  
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    Filho Goncalez, Walter  
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    Geens, Karen  
    Proceedings paper
    2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023
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    Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

    Favero, D.
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    De Santi, C.
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    Mukherjee, K.
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    Borga, Matteo  
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    Geens, Karen  
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    Chatterjee, Urmimala
    Journal article
    2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 114620
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    Impact of radiation on the operation and reliability of deep submicron CMOS technologies

    Claeys, Cor
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    Put, Sofie
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    Griffoni, Alessio
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    Cester, A.
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    Gerardin, S.
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    Meneghesso, G.
    Proceedings paper
    2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.39-46
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    Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

    Tajalli, A.
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    Canato, E.
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    Nardo, A.
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    Meneghini, M.
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    Stockman, Arno  
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    Moens, P.
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    Zanoni, E.
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-6
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    Impact of strain on ESD robustness of FinFET devices

    Griffoni, Alessio
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    Thijs, Steven  
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    Russ, C.
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    Trémouilles, David
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    Scholz, Mirko
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    Linten, Dimitri  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.341-344
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    Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

    Favero, D.
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    De Santi, C.
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    Mukherjee, K.
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    Geens, Karen  
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    Borga, Matteo  
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    Bakeroot, Benoit  
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    You, Shuzhen  
    Proceedings paper
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022
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    IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

    Marko, P.
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    Meneghini, M.
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    Bychikhin, S.
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    Marcon, Denis  
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    Meneghesso, G.
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    Zanoni, E.
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    Pogany, D.
    Journal article
    2012, Microelectronics Reliability, (52) 9_10, p.2194-2199
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    Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs

    Griffoni, Alessio
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    Gerardin, S.
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    Meneghesso, G.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Put, Sofie
    Journal article
    2008, IEEE Transactions on Nuclear Science, (55) 6, p.3182-3188
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    On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

    Stockman, Arno  
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    Canato, E.
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    Tajalli, A.
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    Meneghini, M.
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    Meneghesso, G.
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    Zanoni, E.
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    Moens, P.
    Proceedings paper
    2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.4B.5-1-4B.5-4
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    Study and characterization of GaN MOS capacitors: Planar vs trench topographies

    Mukherjee, K.
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    De Santi, C.
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    You, Shuzhen  
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    Geens, Karen  
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    Borga, Matteo  
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    Decoutere, Stefaan  
    Journal article
    2022, APPLIED PHYSICS LETTERS, (120) 14, p.143501
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    Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

    Meneghini, M.
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    Meneghesso, G.
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    Zanoni, E.
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    Fabris, Elena  
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    Borga, Matteo  
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    Posthuma, Niels  
    Proceedings paper
    2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021
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