Browsing by Author "Niwa, Masaaki"

Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

ALD deposition of high-k and metal gate stacks for advanced CMOS applications

Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)

Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application

Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications

Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON

High-k dielectrics integration prospects

Laser annealed junctions: process integration sequence optimization for advanced CMOS technologies

Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS

Optimization of HfSiON using a design of experiment (DOE) approach

Oxygen-vacancy-induced Vt shift in La-containing devices

Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes